AUIRFU8401 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AUIRFU8401
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 79 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 34 ns
Выходная емкость (Cd): 340 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.00425 Ohm
Тип корпуса: TO-251
Аналог (замена) для AUIRFU8401
AUIRFU8401 Datasheet (PDF)
auirfr8401 auirfu8401.pdf
AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m175C Operating Temperature 4.25mG max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID
auirfr8401 auirfu8401.pdf
AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 3.2m Fast Switching max. 4.25m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 100A Lead-Free, RoHS Compliant ID (Package Limited) 100A
auirfr8403 auirfu8403.pdf
AUIRFR8403AUIRFU8403AUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.4ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 3.1mGl Lead-Free, RoHS CompliantID (Silicon Limited) 127Al Automotive Qualified *DescriptionSID (Package L
auirfr8405 auirfu8405.pdf
AUIRFR8405AUTOMOTIVE GRADE AUIRFU8405Features HEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ. 1.65ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 1.98ml Lead-Free, RoHS Compliantl Automotive Qualified *ID (Silicon Limited) 211ADescriptionSpecifically designed for A
auirfr8403 auirfu8403.pdf
AUIRFR8403 AUTOMOTIVE GRADE AUIRFU8403 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 2.4m Fast Switching max. 3.1m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 127A Lead-Free, RoHS Compliant ID (Package Limited) 100A
auirfr8405 auirfu8405.pdf
AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.65m New Ultra Low On-Resistance max. 1.98m 175C Operating Temperature ID (Silicon Limited) 211A Fast Switching ID (Package Limited) 100A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive
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