Справочник MOSFET. FDP2D3N10C

 

FDP2D3N10C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP2D3N10C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 214 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 4490 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

FDP2D3N10C Datasheet (PDF)

 ..1. Size:435K  fairchild semi
 fdpf2d3n10c fdp2d3n10c.pdf pdf_icon

FDP2D3N10C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:432K  onsemi
 fdp2d3n10c fdpf2d3n10c.pdf pdf_icon

FDP2D3N10C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:283K  inchange semiconductor
 fdp2d3n10c.pdf pdf_icon

FDP2D3N10C

isc N-Channel MOSFET Transistor FDP2D3N10CFEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 2.3m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI2311DS | PMN70XPE | KHB9D0N90N1 | NTP2955 | SGSP461 | LR024N | SMK0460D

 

 
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