FCP650N80Z - описание и поиск аналогов

 

FCP650N80Z. Аналоги и основные параметры

Наименование производителя: FCP650N80Z

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 162 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 11 ns

Cossⓘ - Выходная емкость: 18 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm

Тип корпуса: TO-220

Аналог (замена) для FCP650N80Z

- подборⓘ MOSFET транзистора по параметрам

 

FCP650N80Z даташит

 ..1. Size:650K  fairchild semi
fcp650n80z.pdfpdf_icon

FCP650N80Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 ..2. Size:665K  onsemi
fcp650n80z.pdfpdf_icon

FCP650N80Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:281K  inchange semiconductor
fcp650n80z.pdfpdf_icon

FCP650N80Z

isc N-Channel MOSFET Transistor FCP650N80Z FEATURES Static drain-source on-resistance RDS(on) 650m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATI

Другие MOSFET... MTB33N10E , FDP2D3N10C , FDP4D5N10C , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , FCB199N65S3 , 2N60 , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C , IPF060N03L , FMH35N60S1FD , FMH40N60S1FD , IPF075N03L , FQB70N08 .

History: FDB024N08BL7 | FDMC86320 | 2SJ402

 

 

 

 

↑ Back to Top
.