FCP650N80Z. Аналоги и основные параметры
Наименование производителя: FCP650N80Z
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 162 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 18 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
Тип корпуса: TO-220
Аналог (замена) для FCP650N80Z
- подборⓘ MOSFET транзистора по параметрам
FCP650N80Z даташит
fcp650n80z.pdf
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fcp650n80z.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp650n80z.pdf
isc N-Channel MOSFET Transistor FCP650N80Z FEATURES Static drain-source on-resistance RDS(on) 650m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATI
Другие MOSFET... MTB33N10E , FDP2D3N10C , FDP4D5N10C , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , FCB199N65S3 , 2N60 , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C , IPF060N03L , FMH35N60S1FD , FMH40N60S1FD , IPF075N03L , FQB70N08 .
History: FDB024N08BL7 | FDMC86320 | 2SJ402
History: FDB024N08BL7 | FDMC86320 | 2SJ402
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