IPS110N12N3 - параметры транзистора MOSFET, его аналоги, datasheet

IPS110N12N3 Datasheet (PDF)

..1. Size:587K infineon
ipds110n12n3g ips110n12n3g ips110n12n3 ipd110n12n3.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 120VOptiMOS 3 Power-TransistorIPD_S110N12N3 GData SheetRev. 2.4FinalIndustrial & MultimarketIPD110N12N3 G IPS110N12N3 GOptiMOSTM3Power-TransistorProduct SummaryFeaturesVDS 120 V N-channel, normal levelRDS(on),max11m Excellent gate charge x R product (FOM)DS(on)

..2. Size:261K inchange semiconductor
ips110n12n3.pdf pdf_icon

isc N-Channel MOSFET Transistor IPS110N12N3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

9.1. Size:570K infineon
ips118n10n.pdf pdf_icon

$& " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 100 VDSR ( 492??6= ?@C>2= =6G6= 11.8 m DS(on) maxR I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 75 ADR /6CJ =@H @? C6D:DE2?46 DS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:4

Другие MOSFET... IPB60R190P6 , IPB60R230P6 , IPB60R280P7 , IPB60R330P6 , IPB60R360P7 , IPB60R380P6 , IPB60R600P6 , IPP60R360P7 , K3569 , IPS12CN10L , IPS60R3K4CE , IPS60R400CE , IPS65R400CE , IPS70R1K4CE , IPS70R950CE , IPU050N03L , IPU060N03L .