IPU060N03L. Аналоги и основные параметры
Наименование производителя: IPU060N03L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 56 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 720 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Аналог (замена) для IPU060N03L
- подборⓘ MOSFET транзистора по параметрам
IPU060N03L даташит
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf
Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low
ipu060n03l.pdf
isc N-Channel MOSFET Transistor IPU060N03L FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf
Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo
ipu06n03lag.pdf
IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 5.7 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance
Другие IGBT... IPS110N12N3, IPS12CN10L, IPS60R3K4CE, IPS60R400CE, IPS65R400CE, IPS70R1K4CE, IPS70R950CE, IPU050N03L, AO3401, IPU075N03L, IPU135N03L, IPU60R3K4CE, IRF135S203, IRFS4510, IRFS7434, IRFS7437, IRFS7530
History: IPA040N06N | FQB9N50CTM
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