IPU60R3K4CE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPU60R3K4CE
Маркировка: 60S3K4CE
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 29 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 4.6 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 9 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm
Тип корпуса: IPAK TO-251
Аналог (замена) для IPU60R3K4CE
IPU60R3K4CE Datasheet (PDF)
ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf
IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CEMOSFETDPAK IPAK IPAK SL600V CoolMOS CE Power TransistortabtabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 11233price-performance optimized platform enabling to target cost sensitivea
ipu60r3k4ce.pdf
isc N-Channel MOSFET Transistor IPU60R3K4CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipd60r2k1ce ipu60r2k1ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R2K1CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R2K1CE, IPU60R2K1CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd60r1k0ce ipu60r1k0ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K0CE, IPU60R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipd60r1k5ce ipu60r1k5ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K5CE, IPU60R1K5CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
ipu60r950c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R950C6Data SheetRev. 2.1FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R950C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneer
ipu60r2k0c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R2K0C6Data SheetRev. 2.1FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R2K0C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneer
ipu60r600c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R600C6 Data SheetRev. 2.1FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R600C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpionee
ipu60r1k4c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPU60R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket600V CoolMOS C6 Power TransistorIPU60R1K4C6IPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneer
ipu60r950c6.pdf
isc N-Channel MOSFET Transistor IPU60R950C6FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r2k0c6.pdf
isc N-Channel MOSFET Transistor IPU60R2K0C6FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r600c6.pdf
isc N-Channel MOSFET Transistor IPU60R600C6FEATURESDrain Source Voltage-: V = 600V(Min)DSSLow On-Resistance: R = 600m(Max)DS(on)100% Avalanche TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r1k4c6.pdf
isc N-Channel MOSFET Transistor IPU60R1K4C6FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r1k0ce.pdf
isc N-Channel MOSFET Transistor IPU60R1K0CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r2k1ce.pdf
isc N-Channel MOSFET Transistor IPU60R2K1CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ipu60r1k5ce.pdf
isc N-Channel MOSFET Transistor IPU60R1K5CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
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