IRFS7787
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFS7787
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 76
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 48
ns
Cossⓘ - Выходная емкость: 330
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0084
Ohm
Тип корпуса:
D2PAK
TO-263
- подбор MOSFET транзистора по параметрам
IRFS7787
Datasheet (PDF)
..1. Size:667K international rectifier
irfb7787 irfs7787pbf irfsl7787pbf.pdf 

StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power suppl
..2. Size:985K international rectifier
irfb7787pbf irfs7787pbf irfsl7787pbf.pdf 

StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power supplies S OR-ing
..3. Size:258K inchange semiconductor
irfs7787.pdf 

Isc N-Channel MOSFET Transistor IRFS7787FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
8.1. Size:613K international rectifier
irfs7762pbf irfsl7762pbf.pdf 

StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies SID 8
8.2. Size:653K international rectifier
irfb7734pbf irfs7734pbf irfsl7734pbf.pdf 

StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
8.3. Size:657K international rectifier
irfb7730 irfs7730pbf irfsl7730pbf.pdf 

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A
8.4. Size:576K international rectifier
irfs7734-7ppbf.pdf 

StrongIRFET IRFS7734-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications VDSS 75V D Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G max 3.05m Synchronous rectifier applications S Resonant mode power supplies ID 197A O
8.5. Size:650K international rectifier
irfb7734 irfs7734pbf irfsl7734pbf.pdf 

StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
8.6. Size:610K international rectifier
irfs7762 irfsl7762pbf.pdf 

StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies SID 8
8.7. Size:657K international rectifier
irfb7730pbf irfs7730pbf irfsl7730pbf.pdf 

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A
8.8. Size:518K international rectifier
irfs7730-7ppbf.pdf 

StrongIRFET IRFS7730-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V BLDC motor drive applications DRDS(on) typ. Battery powered circuits 1.70m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 269A S Resonant mode
8.9. Size:258K inchange semiconductor
irfs7730.pdf 

isc N-Channel MOSFET Transistor IRFS7730FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
8.10. Size:257K inchange semiconductor
irfs7762.pdf 

Isc N-Channel MOSFET Transistor IRFS7762FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
8.11. Size:258K inchange semiconductor
irfs7734.pdf 

isc N-Channel MOSFET Transistor IRFS7734FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
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