IXTP230N04T4M - описание и поиск аналогов

 ..1. Size:216K  ixys
 ixtp230n04t4m.pdf 

Preliminary Technical Information VDSS = 40V TrenchT4TM IXTP230N04T4M ID25 = 230A Power MOSFET RDS(on) 2.9m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V G Isolated Tab D S VDGR TJ = 25 C to 175 C, RGS = 1M 40 V VG

 2.1. Size:255K  inchange semiconductor
 ixtp230n04t4.pdf 

isc N-Channel MOSFET Transistor IXTP230N04T4 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 5.1. Size:310K  ixys
 ixta230n075t2 ixtp230n075t2.pdf 

TrenchT2TM VDSS = 75V IXTA230N075T2 ID25 = 230A Power MOSFET IXTP230N075T2 RDS(on) 4.2m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSM Transient 20 V G D S ID25 TC = 25 C 2

 9.1. Size:65K  ixys
 ixtm2n100 ixtm2n100a ixtm2n95 ixtm2n95a ixtp2n100a ixtp2n95 ixtp2n95a.pdf 

 9.2. Size:214K  ixys
 ixta220n055t ixtp220n055t.pdf 

Preliminary Technical Information IXTA220N055T VDSS = 55 V TrenchMVTM IXTP220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T

 9.3. Size:175K  ixys
 ixta220n075t ixtp220n075t.pdf 

Preliminary Technical Information IXTA220N075T VDSS = 75 V TrenchMVTM IXTP220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2

 9.4. Size:127K  ixys
 ixtp20n65xm.pdf 

Preliminary Technical Information X-Class VDSS = 650V IXTP20N65XM Power MOSFET ID25 = 9A RDS(on) 210m N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G D S VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G = Gate D = Drain VGSM Transient 40 V S = So

 9.5. Size:90K  ixys
 ixtp2r4n50p ixty2r4n50p.pdf 

IXTP 2R4N50P VDSS = 500 V PolarHVTM IXTY 2R4N50P ID25 = 2.4 A Power MOSFET RDS(on) 3.75 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSM Transient 40 V (TAB) G VGSM Continuous 30 V D S ID25 TC = 25 C 2.4 A

 9.6. Size:231K  ixys
 ixta20n65x ixth20n65x ixtp20n65x.pdf 

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG

 9.7. Size:248K  ixys
 ixta260n055t2 ixtp260n055t2.pdf 

TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 55 V S (TAB) VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25 C 260 A ILRM

 9.8. Size:113K  ixys
 ixta2n80 ixtp2n80.pdf 

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A

 9.9. Size:215K  ixys
 ixta200n085t ixtp200n085t.pdf 

Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25

 9.10. Size:173K  ixys
 ixta240n055t ixtp240n055t.pdf 

Preliminary Technical Information IXTA240N055T VDSS = 55 V TrenchMVTM IXTP240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2

 9.11. Size:76K  ixys
 ixta2n100 ixtp2n100.pdf 

High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 RDS(on) = 7 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A IDM TC = 25 C, pulse width limited by

 9.12. Size:163K  ixys
 ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf 

Advance Technical Information VDSS = 40V TrenchT4TM IXTA270N04T4 ID25 = 270A Power MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V G D D (Tab) S VDGR TJ = 25 C to 175 C, RG

 9.13. Size:184K  ixys
 ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf 

 9.14. Size:118K  ixys
 ixtp24n65x2m.pdf 

Advance Technical Information X2-Class VDSS = 650V IXTP24N65X2M Power MOSFET ID25 = 8.5A RDS(on) 145m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G D S VGSS Continuous 30 V VGSM Transient

 9.15. Size:183K  ixys
 ixtp2n65x2 ixty2n65x2.pdf 

Preliminary Technical Information X2-Class VDSS = 650V IXTY2N65X2 Power MOSFET ID25 = 2A IXTP2N65X2 RDS(on) 2.3 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient

 9.16. Size:215K  ixys
 ixta200n075t ixtp200n075t.pdf 

Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25

 9.17. Size:240K  inchange semiconductor
 ixtp26p10t.pdf 

isc P-Channel MOSFET Transistor IXTP26P10T FEATURES Static drain-source on-resistance RDS(on) 90m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High side switching Push pull amplifiers Current regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT