CJ2302S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CJ2302S
Маркировка: S2U
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.35 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 1.2 V
Максимально допустимый постоянный ток стока |Id|: 2.1 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4 nC
Время нарастания (tr): 55 ns
Выходная емкость (Cd): 120 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
Тип корпуса: SOT-23
CJ2302S Datasheet (PDF)
cj2302s.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302S N-Channel 20-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 60m@4.5V20V2.1A1. GATE 115m@2.5V2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=25
cj2302.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING: S2 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS
cj2301.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20
cj2307.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2307 P-Channel 30-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 88m@-10V-30V-2.7A1. GATE 138m@-4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices MARKING Equivalent Circuit Maximum ratings ( Ta=25 unless othe
cj2306.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETSSOT-23 CJ2306 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE APPLICATIONS 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: S6 Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source voltage VD
cj2303.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 190m@-10V-30V-1.9A1. GATE 330m@-4.5V2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=
cj2301s.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 112m@-4.5V-20V-2.3A142m@-2.5V1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE z Load Switch for Portable Devices TrenchFET Power MOSFET z DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta
cj2304.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 60m@10V30V3.3A1. GATE 75m@4.5V2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=25 unless other
cj2305.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2305 P-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 45m@-4.5V-12V 60m@-2.5V-4.1A1. GATE 90m@-1.8V 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit Maximum ratings
cj2301-hf.pdf
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MOSFETComchipS M D D i o d e S p e c i a l i s tCJ2301-HFP-ChannelRoHS DeviceHalogen FreeSOT-23Features - P-Channel 20-V(D-S) MOSFET 0.118(3.00)0.110(2.80) - Trench FET Power MOSFET.3 - Load Switch for Portable Devices.0.055(1.40) - DC/DC Converter.0.047(1.20)1 2Mechanical data0.079(2.00)0.071(1.80) - Case: SOT-23, molded plastic. - Terminals: Solde
cj2306.pdf
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CJ2306www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![CJ2302S](https://alltransistors.com/images/us.png)
![CJ2302S](https://alltransistors.com/images/es.png)
![CJ2302S](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C