CJ3401A datasheet, подбор замены

 ..1. Size:1001K  jiangsu
 cj3401a.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 m @-10V 60 -30V 70 m -4.2A @-4.5V m @-2.5V 85 FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maxi

 8.1. Size:377K  jiangsu
 cj3401.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON). 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN D MARKING R1 G S Maximum ratings ( Ta=25 unless otherwise noted

 8.2. Size:114K  jiangsu
 cj3401-hf.pdf 

MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ3401-HF (P-Channel ) Reverse Voltage - 30 Volts Forward Current - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) - P-Channel 0.110(2.80) - High dense cell design for extremely low RDS(ON) 3 0.055(1.40) - Exceptional on-resistance and miximum DC current 0.047(1.20) capability. 1 2 0.079(2.00) 0.071(1.80) Me

 9.1. Size:1012K  jiangsu
 cj3400a.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 32m @10V 30V 38m @4.5V 5.8A 1. GATE 45m @2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resistanc

 9.2. Size:300K  jiangsu
 cj3407.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23 General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load 1. GATE switch or in PWM applications. 2. SOURCE 3. DRAIN MARKING 3

 9.3. Size:744K  jiangsu
 cj3402.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs CJ3402 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 55 m @10V 30V 4A m 70 @4.5V 110m @2.5V DESCRIPTION 1. GATE The CJ3402 uses advanced trench technology to provide excellent 2. SOURCE 3. DRAIN RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.

 9.4. Size:1096K  jiangsu
 cj3406.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs CJ3406 N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 65 m @10V 30V 3.6A m @4.5V 105 1. GATE 2. SOURCE 3. DRAIN DESCRIPTION The CJ3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for

 9.5. Size:278K  jiangsu
 cj3400-hf.pdf 

MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ3400-HF (N-Channel ) Reverse Voltage 30 Volts Forward Current 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) - N-Channel Enhancement mode field effect transistor. 3 - High dense cell design for extermely low RDS(ON) 0.055(1.40) 0.047(1.20) - Exceptional on-resistance and maximum DC current capab

 9.6. Size:169K  jiangsu
 cj3400.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON) 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN MARKING R0 Maximum ratings ( Ta=25 unless otherwise noted) Parameter

 9.7. Size:981K  jiangsu
 cj3404.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 30m @ 10V 30V 5.8A 1. GATE 42m @4.5V 2. SOURCE 3. DRAIN DESCRIPTION The CJ3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for u

 9.8. Size:331K  comchip
 cj3404-hf.pdf 

MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ3404-HF (N-Channel ) Reverse Voltage 30 Volts Forward Current 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. 3 -Use advanced trench technology to provide 0.055(1.40) 0.047(1.20) excellent rds(on) and low gate charge 1 2 -This device is su

 9.9. Size:1722K  cn vbsemi
 cj3402.pdf 

CJ3402 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1

 9.10. Size:1722K  cn vbsemi
 cj3400.pdf 

CJ3400 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1