CJ3404
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CJ3404
Маркировка: R4
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.35
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 5.8
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 3.1
ns
Cossⓘ - Выходная емкость: 118
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03
Ohm
Тип корпуса:
SOT-23
Аналог (замена) для CJ3404
CJ3404
Datasheet (PDF)
..1. Size:981K jiangsu
cj3404.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 30m@ 10V30V5.8A1. GATE 42m@4.5V2. SOURCE 3. DRAIN DESCRIPTION The CJ3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for u
0.1. Size:331K comchip
cj3404-hf.pdf 
MOSFETComchipS M D D i o d e S p e c i a l i s tCJ3404-HF (N-Channel )Reverse Voltage: 30 VoltsForward Current: 5.8 ARoHS DeviceHalogen FreeSOT-23Features0.118(3.00)0.110(2.80) -N-Channel -Enhancement mode field effect transistor.3 -Use advanced trench technology to provide 0.055(1.40)0.047(1.20)excellent rds(on) and low gate charge1 2 -This device is su
9.1. Size:1012K jiangsu
cj3400a.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 32m@10V30V 38m@4.5V5.8A1. GATE 45m@2.5V2. SOURCE 3. DRAIN FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resistanc
9.2. Size:300K jiangsu
cj3407.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23 General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load 1. GATE switch or in PWM applications. 2. SOURCE 3. DRAIN MARKING: 3
9.3. Size:377K jiangsu
cj3401.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON). 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN D MARKING: R1 G S Maximum ratings ( Ta=25 unless otherwise noted
9.4. Size:744K jiangsu
cj3402.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETsCJ3402 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 55 m@10V30V 4Am70 @4.5V110m@2.5VDESCRIPTION 1. GATE The CJ3402 uses advanced trench technology to provide excellent 2. SOURCE 3. DRAIN RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
9.5. Size:1096K jiangsu
cj3406.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETsCJ3406 N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 65 m@10V30V 3.6Am@4.5V1051. GATE 2. SOURCE 3. DRAIN DESCRIPTION The CJ3406 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for
9.6. Size:278K jiangsu
cj3400-hf.pdf 
MOSFETComchipS M D D i o d e S p e c i a l i s tCJ3400-HF (N-Channel )Reverse Voltage: 30 VoltsForward Current: 5.8 ARoHS DeviceHalogen Free SOT-23Features0.118(3.00)0.110(2.80) - N-Channel Enhancement mode field effect transistor. 3 - High dense cell design for extermely low RDS(ON)0.055(1.40)0.047(1.20) - Exceptional on-resistance and maximum DC current capab
9.7. Size:169K jiangsu
cj3400.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON) 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN MARKING: R0 Maximum ratings ( Ta=25 unless otherwise noted) Parameter
9.8. Size:1001K jiangsu
cj3401a.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23 m@-10V60-30V 70 m -4.2A@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maxi
9.9. Size:114K jiangsu
cj3401-hf.pdf 
MOSFETComchipS M D D i o d e S p e c i a l i s tCJ3401-HF (P-Channel )Reverse Voltage: - 30 VoltsForward Current: - 4.2 ARoHS DeviceHalogen FreeSOT-23Features0.118(3.00) - P-Channel 0.110(2.80) - High dense cell design for extremely low RDS(ON) 30.055(1.40) - Exceptional on-resistance and miximum DC current0.047(1.20)capability.1 20.079(2.00)0.071(1.80)Me
9.10. Size:1722K cn vbsemi
cj3402.pdf 
CJ3402www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1
9.11. Size:1722K cn vbsemi
cj3400.pdf 
CJ3400www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1
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