CJD04N60 datasheet, аналоги, основные параметры

Наименование производителя: CJD04N60  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 125 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm

Тип корпуса: TO-251S

  📄📄 Копировать 

Аналог (замена) для CJD04N60

- подборⓘ MOSFET транзистора по параметрам

 

CJD04N60 даташит

 ..1. Size:640K  jiangsu
 cjd04n60.pdf pdf_icon

CJD04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD04N60 N-Channel Power MOSFET TO-251 General Description 1. GATE This advanced high voltage MOSFET is designed to wighstand 2. DRAIN 3. SOURCE high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery

 0.1. Size:421K  jiangsu
 cjd04n60a.pdf pdf_icon

CJD04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

 0.2. Size:267K  jiangsu
 cjd04n60b.pdf pdf_icon

CJD04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed 1. GATE for

 7.1. Size:439K  jiangsu
 cjd04n65.pdf pdf_icon

CJD04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high spe

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... CJB08N65, CJB10N60, CJB71N90, CJD01N60, CJD01N65B, CJD01N80, CJD02N60, CJD02N65, SKD502T, CJD04N60A, CJD04N60B, CJD04N65, CJD04N65A, CJD05N60B, CJD4410, CJD4435, CJI02N60