CJP02N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CJP02N80
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 120 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 2.4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 70 ns
Выходная емкость (Cd): 60 pf
Сопротивление сток-исток открытого транзистора (Rds): 6.3 Ohm
Тип корпуса: TO-220
CJP02N80 Datasheet (PDF)
cjp02n80.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP02N80 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION The CJP02N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also
cjp02n60.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP02N60 N-Channel Power MOSFET TO-220-3L General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in ava
cjp02n65.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP02N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
