CJPF04N60 datasheet, аналоги, основные параметры

Наименование производителя: CJPF04N60  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 125 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm

Тип корпуса: TO-220F

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Аналог (замена) для CJPF04N60

- подборⓘ MOSFET транзистора по параметрам

 

CJPF04N60 даташит

 ..1. Size:501K  jiangsu
 cjpf04n60.pdf pdf_icon

CJPF04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60 600V N-Channel Power MOSFET TO-220F General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode wigh fast 2. DRAIN 3. SOURCE 1 2 3

 0.1. Size:315K  jiangsu
 cjpf04n60a.pdf pdf_icon

CJPF04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 6.1. Size:305K  jiangsu
 cjpf04n65a.pdf pdf_icon

CJPF04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 6.2. Size:423K  jiangsu
 cjpf04n65.pdf pdf_icon

CJPF04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... CJP71N90, CJP75N75, CJP75N80, CJP85N80, CJPF01N65B, CJPF02N60, CJPF02N65, CJPF03N80, IRFZ48N, CJPF04N60A, CJPF04N65, CJPF04N65A, CJPF04N80, CJPF05N60, CJPF05N60B, CJPF05N65, CJPF07N60