Справочник MOSFET. CJPF04N60A

 

CJPF04N60A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CJPF04N60A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

CJPF04N60A Datasheet (PDF)

 ..1. Size:315K  jiangsu
 cjpf04n60a.pdf pdf_icon

CJPF04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 5.1. Size:501K  jiangsu
 cjpf04n60.pdf pdf_icon

CJPF04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60 600V N-Channel Power MOSFET TO-220F General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode wigh fast 2. DRAIN 3. SOURCE 1 2 3

 6.1. Size:305K  jiangsu
 cjpf04n65a.pdf pdf_icon

CJPF04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 6.2. Size:423K  jiangsu
 cjpf04n65.pdf pdf_icon

CJPF04N60A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

ПОКАЗАТЬ ЕЩЁ

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History: FCH099N60E | IXTT360N055T2 | WMK18N50C4 | SSM4407GM | 2SK3228 | OSG55R108KZF | KRF7401

 

 
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