CJPF12N65 datasheet, аналоги, основные параметры

Наименование производителя: CJPF12N65  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 90 ns

Cossⓘ - Выходная емкость: 200 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm

Тип корпуса: TO-220F

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Аналог (замена) для CJPF12N65

- подборⓘ MOSFET транзистора по параметрам

 

CJPF12N65 даташит

 ..1. Size:313K  jiangsu
 cjpf12n65.pdf pdf_icon

CJPF12N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF12N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s

 6.1. Size:365K  jiangsu
 cjpf12n60.pdf pdf_icon

CJPF12N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 / F Plastic-Encapsulate MOSFETS CJP12N60,CJPF12N60 600V N-Channel Power MOSFET General Description This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withistand high energy pulse in the avalanche and commutation mode. T

 9.1. Size:390K  jiangsu
 cjpf10n65.pdf pdf_icon

CJPF12N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF10N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s

 9.2. Size:485K  jiangsu
 cjp10n60 cjpf10n60.pdf pdf_icon

CJPF12N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS CJP10N60,CJPF10N60 N-Channel Power MOSFET TO-220-3L/TO-220F Description The CJP10N60/CJPF10N60 is a high voltage and high current power MOSFET, designed to have characteristics, such as fast switching time, low gate charge, low on-state resistance and have rugged avalanche character

ПОКАЗАТЬ ЕЩЁ

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