CJPF12N65 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CJPF12N65
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 200 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
Тип корпуса: TO-220F
Аналог (замена) для CJPF12N65
CJPF12N65 Datasheet (PDF)
cjpf12n65.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF12N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s
cjpf12n60.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 / F Plastic-Encapsulate MOSFETS CJP12N60,CJPF12N60 600V N-Channel Power MOSFET General Description This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withistand high energy pulse in the avalanche and commutation mode. T
cjpf10n65.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF10N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high s
cjp10n60 cjpf10n60.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETSCJP10N60,CJPF10N60 N-Channel Power MOSFET TO-220-3L/TO-220FDescription The CJP10N60/CJPF10N60 is a high voltage and high current power MOSFET, designed to have characteristics, such as fast switching time, low gate charge, low on-state resistance and have rugged avalanche character
Другие MOSFET... CJPF05N65 , CJPF07N60 , CJPF07N65 , CJPF08N60 , CJPF08N65 , CJPF10N60 , CJPF10N65 , CJPF12N60 , IRFP064N , CJQ4410 , CJQ4435 , CJQ4438 , CJQ4459 , CJQ9435 , CJU01N60 , CJU01N65B , CJU01N80 .
History: NTMFS5C456NL | FHD4N65E | P7006BL
History: NTMFS5C456NL | FHD4N65E | P7006BL



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