CJU04N60A - Даташиты. Аналоги. Основные параметры
Наименование производителя: CJU04N60A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 180 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
Тип корпуса: TO-252
Аналог (замена) для CJU04N60A
CJU04N60A Datasheet (PDF)
cju04n60a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi
cju04n60.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60 600V N-Channel Power MOSFET TO-252-2LGeneral Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high
cju04n65a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N65A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi
cju04n65.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N65 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig
Другие MOSFET... CJU01N60 , CJU01N65B , CJU01N80 , CJU02N60 , CJU02N65 , CJU02N80 , CJU03N80 , CJU04N60 , IRFP260N , CJU04N65 , CJU04N65A , CJU05N60 , CJU05N60B , CJU10N10 , CJU4828 , CJV01N60 , CJV01N65B .
History: SHD219701 | BLS60R380F-U | CJU01N65B | BLS60R380F-P | MTP2N80 | 4N65KG-TA3-T
History: SHD219701 | BLS60R380F-U | CJU01N65B | BLS60R380F-P | MTP2N80 | 4N65KG-TA3-T



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