CTLDM7181-M832D datasheet, аналоги, основные параметры

Наименование производителя: CTLDM7181-M832D  📄📄 

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.65 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 120 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm

Тип корпуса: TLM832D

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Аналог (замена) для CTLDM7181-M832D

- подборⓘ MOSFET транзистора по параметрам

 

CTLDM7181-M832D даташит

 0.1. Size:467K  central
 ctldm7181-m832d.pdf pdf_icon

CTLDM7181-M832D

CTLDM7181-M832D SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR COMPLEMENTARY SILICON MOSFETS CTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltages. MARK

 7.1. Size:613K  central
 ctldm7120-m832ds.pdf pdf_icon

CTLDM7181-M832D

CTLDM7120-M832DS SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING COD

 7.2. Size:456K  central
 ctldm7120-m621 ctldm7120-m621h.pdf pdf_icon

CTLDM7181-M832D

CTLDM7120-M621H SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFET an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKIN

 7.3. Size:470K  central
 ctldm7120-m832d.pdf pdf_icon

CTLDM7181-M832D

CTLDM7120-M832D SURFACE MOUNT www.centralsemi.com DUAL, N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFETS CTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... CTLDM7002A-M621, CTLDM7002A-M621H, CTLDM7003-M621, CTLDM7120-M563, CTLDM7120-M621, CTLDM7120-M621H, CTLDM7120-M832D, CTLDM7120-M832DS, IRF9540N, CTLDM7590, CTLDM8002A-M621, CTLDM8002A-M621H, CTLDM8120-M621H, CTLDM8120-M832D, CTLM7110-M832D, CTLM8110-M832D, CTM01N60