CWDM305N - параметры транзистора MOSFET, его аналоги, datasheet

CWDM305N Datasheet (PDF)

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CWDM305NSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305N is SILICON MOSFETa high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.MARKING CODE:

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CWDM305NDSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305ND is SILICON MOSFETa dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.M

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CWDM305PDSURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305PD SILICON MOSFETis a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshol

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CWDM305PSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305P is SILICON MOSFETa high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage,

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .