Справочник MOSFET. DK48N88

 

DK48N88 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DK48N88
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 92 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 89.3 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 515 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для DK48N88

 

 

DK48N88 Datasheet (PDF)

 ..1. Size:1176K  thinkisemi
 dk48n88.pdf

DK48N88 DK48N88

DK48N88 PbDK48N88Pb Free Plating Product70V,92A N-Channel Trench Process Power MOSFETGeneral Description The DK48N88 is N-channel MOS Field Effect Transistor DK48N88designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

 8.1. Size:1016K  thinkisemi
 dk48n80.pdf

DK48N88 DK48N88

DK48N80 PbDK48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The DK48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS DK48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features

 9.1. Size:1047K  thinkisemi
 dk48n18.pdf

DK48N88 DK48N88

DK48N18 PbDK48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description DK48N18The DK48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea

 9.2. Size:724K  thinkisemi
 dk48n75.pdf

DK48N88 DK48N88

DK48N75 PbDK48N75Pb Free Plating Product70V,68A N-Channel Trench Process Power MOSFETGeneral Description The is N-channel MOS Field Effect Transistor DK48N75designed for high current switching applications. Rugged EAS DK48N75(TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS

 9.3. Size:1018K  thinkisemi
 dk48n78.pdf

DK48N88 DK48N88

DK48N78 PbDK48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The DK48N78 is N-channel MOS Field Effect Transistor DK48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

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