DKI06108 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DKI06108
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 47 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 36.2 nC
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 280 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0097 Ohm
Тип корпуса: TO-252
DKI06108 Datasheet (PDF)
dki06108.pdf
60 V, 47 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET DKI06108 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 47 A D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 23.6 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate
dki06108.pdf
isc N-Channel MOSFET Transistor DKI06108FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
dki06186.pdf
60 V, 31 A, 11.8 m Low RDS(ON) N ch Trench Power MOSFET DKI06186 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 31 A D RDS(ON) -------- 16.3 m max. (VGS = 10 V, ID = 15.5 A) Qg ------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Low Total Gat
dki06186.pdf
isc N-Channel MOSFET Transistor DKI06186FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 16.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
dki06075.pdf
60 V, 48 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET DKI06075 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 7.0 m max. (VGS = 10 V, ID = 34 A) Qg -------- 26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39 A) Low Total Gat
dki06261.pdf
60 V, 25 A, 16.7 m Low RDS(ON) N ch Trench Power MOSFET DKI06261 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 25 A D RDS(ON) -------- 21.9 m max. (VGS = 10 V, ID = 12.5 A) Qg ------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A) Low Total Gat
dki06075.pdf
isc N-Channel MOSFET Transistor DKI06075FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
dki06261.pdf
isc N-Channel MOSFET Transistor DKI06261FEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 21.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918