DKI06261 datasheet, подбор замены

 ..1. Size:369K  sanken-ele
 dki06261.pdf 

60 V, 25 A, 16.7 m Low RDS(ON) N ch Trench Power MOSFET DKI06261 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 25 A D RDS(ON) -------- 21.9 m max. (VGS = 10 V, ID = 12.5 A) Qg ------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A) Low Total Gat

 ..2. Size:265K  inchange semiconductor
 dki06261.pdf 

isc N-Channel MOSFET Transistor DKI06261 FEATURES Drain Current I =25A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 21.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.1. Size:369K  sanken-ele
 dki06075.pdf 

60 V, 48 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET DKI06075 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 7.0 m max. (VGS = 10 V, ID = 34 A) Qg -------- 26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39 A) Low Total Gat

 9.2. Size:369K  sanken-ele
 dki06186.pdf 

60 V, 31 A, 11.8 m Low RDS(ON) N ch Trench Power MOSFET DKI06186 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 31 A D RDS(ON) -------- 16.3 m max. (VGS = 10 V, ID = 15.5 A) Qg ------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Low Total Gat

 9.3. Size:369K  sanken-ele
 dki06108.pdf 

60 V, 47 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET DKI06108 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 47 A D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 23.6 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate

 9.4. Size:266K  inchange semiconductor
 dki06075.pdf 

isc N-Channel MOSFET Transistor DKI06075 FEATURES Drain Current I =48A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.5. Size:265K  inchange semiconductor
 dki06186.pdf 

isc N-Channel MOSFET Transistor DKI06186 FEATURES Drain Current I =31A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 16.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.6. Size:266K  inchange semiconductor
 dki06108.pdf 

isc N-Channel MOSFET Transistor DKI06108 FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose