Справочник MOSFET. DKI06261

 

DKI06261 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DKI06261
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 32 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 2.3 ns
   Cossⓘ - Выходная емкость: 125 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0219 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для DKI06261

 

 

DKI06261 Datasheet (PDF)

 ..1. Size:369K  sanken-ele
 dki06261.pdf

DKI06261 DKI06261

60 V, 25 A, 16.7 m Low RDS(ON) N ch Trench Power MOSFET DKI06261 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 25 A D RDS(ON) -------- 21.9 m max. (VGS = 10 V, ID = 12.5 A) Qg ------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A) Low Total Gat

 ..2. Size:265K  inchange semiconductor
 dki06261.pdf

DKI06261 DKI06261

isc N-Channel MOSFET Transistor DKI06261FEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 21.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:369K  sanken-ele
 dki06075.pdf

DKI06261 DKI06261

60 V, 48 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET DKI06075 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 7.0 m max. (VGS = 10 V, ID = 34 A) Qg -------- 26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39 A) Low Total Gat

 9.2. Size:369K  sanken-ele
 dki06186.pdf

DKI06261 DKI06261

60 V, 31 A, 11.8 m Low RDS(ON) N ch Trench Power MOSFET DKI06186 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 31 A D RDS(ON) -------- 16.3 m max. (VGS = 10 V, ID = 15.5 A) Qg ------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Low Total Gat

 9.3. Size:369K  sanken-ele
 dki06108.pdf

DKI06261 DKI06261

60 V, 47 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET DKI06108 Features Package TO-252 V(BR)DSS --------------------------------- 60 V (ID = 100 A) (4) ID ---------------------------------------------------------- 47 A D RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 23.6 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate

 9.4. Size:266K  inchange semiconductor
 dki06075.pdf

DKI06261 DKI06261

isc N-Channel MOSFET Transistor DKI06075FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.5. Size:265K  inchange semiconductor
 dki06186.pdf

DKI06261 DKI06261

isc N-Channel MOSFET Transistor DKI06186FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 16.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.6. Size:266K  inchange semiconductor
 dki06108.pdf

DKI06261 DKI06261

isc N-Channel MOSFET Transistor DKI06108FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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