DKI10526 - параметры транзистора MOSFET, его аналоги, datasheet

DKI10526 Datasheet (PDF)

..1. Size:369K sanken-ele
dki10526.pdf pdf_icon

100 V, 19 A, 34.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10526 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 19 A D RDS(ON) ---------- 54.2 m max. (VGS = 10 V, ID = 9.3 A) Qg ------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A) Low Total G

..2. Size:265K inchange semiconductor
dki10526.pdf pdf_icon

isc N-Channel MOSFET Transistor DKI10526FEATURESDrain Current I =19A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 54.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.1. Size:369K sanken-ele
dki10751.pdf pdf_icon

100 V, 15 A, 50.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10751 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 15 A D RDS(ON) ---------- 72.6m max. (VGS = 10 V, ID = 7.5 A) Qg --------- 6.5 nC (VGS = 4.5 V, VDS = 50 V, ID = 9.5 A) Low Total G

9.2. Size:369K sanken-ele
dki10299.pdf pdf_icon

100 V, 28 A, 20.4 m Low RDS(ON) N ch Trench Power MOSFET DKI10299 Features Package TO-252 V(BR)DSS -------------------------------- 100 V (ID = 100 A) (4) ID ---------------------------------------------------------- 28 A D RDS(ON) -------- 30.0 m max. (VGS = 10 V, ID = 14.2 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat