DMG3404L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMG3404L
Маркировка: N34
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.78 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 4.2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13.2 nC
Время нарастания (tr): 4.4 ns
Выходная емкость (Cd): 66 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.025 Ohm
Тип корпуса: SOT-23
DMG3404L Datasheet (PDF)
dmg3404l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 5.8A 25m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 35m @ VGS = 4.5V 4.8A Halogen and Antimony Free.
dmg3402l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance: ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25C Low Input Capacitance 52m @ VGS = 10V 4A Fast Switching Speed 30V 65m @ VGS = 4.5V 3A Low Input/Output Leakage 85m @ VGS = 2.5V 2A Totally Lead-Free & Fully RoHS Compliant (No
dmg3406l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMG3406L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 3.6A 50m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 70m @ VGS = 4.5V 2.8A Halogen and Antimony Free.
dmg3401lsn.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (Note 3) 85m @ VGS =
dmg3407ssn.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Product specificationDMG3407SSNP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 50m @ VGS = -10V -4.0A Low Input/Output Leakage -30V Lead-Free Finish; RoHS compliant (Note 1) 72m @ VGS = -4.5V -3.3A Halogen and Antimony Free.
dmg3401lsn.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Product specificationDMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HM3400B