DMN1025UFDB datasheet, подбор замены

 ..1. Size:262K  diodes
 dmn1025ufdb.pdf 

DMN1025UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Low Profile, 0.6mm Max Height 25m @ VGS = 4.5V 6.9A ESD protected gate. N-Channel 12V 30m @ VGS = 2.5V 6.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 38m @ VGS = 1.8V 5

 8.1. Size:398K  diodes
 dmn1029ufdb.pdf 

DMN1029UFDB N-CHANNEAL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25 C Low Profile, 0.6mm Max Height 29m @ VGS = 4.5V 5.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 34m @ VGS = 2.5V 5.1A Halogen and Antimony Free. Green Device (Note 3) 12V 4

 9.1. Size:147K  diodes
 dmn100.pdf 

DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Extremely Low On-Resistance 170m @ VGS = 4.5V Case SC-59 Case Material Molded Plastic, "Green" Molding Compound. High Drain Current 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity Level 1 per J-

 9.2. Size:259K  diodes
 dmn10h099sfg.pdf 

DMN10H099SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C density end products 80m @ VGS = 10V 4.2A Occupies just 33% of the board area occupied by SO-8 enabling

 9.3. Size:418K  diodes
 dmn10h120se.pdf 

DMN10H120SE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 110m @ VGS = 10V 3.6A Fast Switching Speed 100V 122m @ VGS = 6.0V 3.4A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free

 9.4. Size:406K  diodes
 dmn1045ufr4.pdf 

DMN1045UFR4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Input/Output Leakage TA = +25 C Fast Switching Speed ESD Protected Gate 45m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 64m @ VGS = 2

 9.5. Size:487K  diodes
 dmn10h100sk3.pdf 

DMN10H100SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) ensures on state losses are minimized ID BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25 C 80m @ VGS = 10V 18A density end products 100V 16A 100m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

 9.6. Size:401K  diodes
 dmn10h170sfde.pdf 

DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max PCB Footprint of 4mm2 V(BR)DSS RDS(ON) max TA = +25 C Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 160m @ VGS = 10V 2.9A 100V Halogen and Antimony Free. Green Device

 9.7. Size:284K  diodes
 dmn1033ucb4.pdf 

DMN1033UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits IS Built-in G-S protection diode against ESD 2kV HBM. VSSS RSS(ON) TA = +25 C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 26m @ VGS = 4.5V 5.5 A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

 9.8. Size:508K  diodes
 dmn1003uca6.pdf 

DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.54mm 1.77mm IS Height = 0.21mm for Low Profile BVSSS RSS(ON) Max TA = +25 C ESD Protection of Gate 3.2m @ VGS = 4.5V 23.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.3m @ VGS = 2.5V 16.8A Halogen and Antimony Free. Green De

 9.9. Size:303K  diodes
 dmn10h170sfg.pdf 

DMN10H170SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25 C Low RDS(ON) ensures on state losses are minimized 122m @ VGS = 10V 2.9A Small form factor thermally efficient package enables higher 100V 133m @ VGS = 4.5V 2.7A density end

 9.10. Size:414K  diodes
 dmn10h170sk3.pdf 

DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25 C 140m @ VGS = 10V 12A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 11A 160m @ VGS = 4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

 9.11. Size:296K  diodes
 dmn10h220l.pdf 

DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25 C Fast Switching Speed Low Input/Output Leakage 220m @ VGS = 10V 1.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 1.3A 250m @ VGS = 4.5V Halogen and Antimony Fre

 9.12. Size:303K  diodes
 dmn1019usn.pdf 

DMN1019USN 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX TA = +25 C ESD Protected Gate 10m @ VGS = 4.5V 9.3A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 12m @ VGS = 2.5V 8.5A Halogen and Antimony Free. Green Device (Note 3) 12V 14m @ VGS = 1.8V 7.9A Qualified to AEC-Q1

 9.13. Size:430K  diodes
 dmn1002uca6.pdf 

DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.05mm 1.77mm IS BVSSS RSS(ON) Max Height = 0.11mm for Low Profile TA = +25 C ESD Protection of Gate 2.75m @ VGS = 4.5V 24.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V 6.1m @ VGS = 2.5V 16.4A Halogen and Antimony Free. Green D

 9.14. Size:236K  diodes
 dmn10h120sfg.pdf 

DMN10H120SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C density end products 110m @ VGS = 10V 3.8 A Occupies just 33% of the board area occupied by SO-8 enabling

 9.15. Size:310K  diodes
 dmn1019uvt.pdf 

DMN1019UVT 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX TA = +25 C ESD Protected Gate 10m @ VGS = 4.5V 10.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m @ VGS = 2.5V 9.8A Halogen and Antimony Free. Green Device (Note 3) 12V 14m @ VGS = 1.8V 9.1A 18m @ VGS = 1.5V

 9.16. Size:281K  diodes
 dmn1019ufde.pdf 

DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max Package TA = +25 C PCB footprint of 4mm2 Low Gate Threshold Voltage 10m @ VGS = 4.5V 11A 12m @ VGS = 2.5V 10 Fast Switching Speed U-DFN2020-6 12V 14m @ VGS = 1.8V 9A ESD Protected Gate T

 9.17. Size:364K  diodes
 dmn10h220lvt.pdf 

DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-Resistance TA = +25 C Fast Switching Speed 220m @ VGS = 10V 2.24A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V Halogen and Antimony Free. Green Device (Note 3) 2.10A 250m @ VGS =

 9.18. Size:467K  diodes
 dmn10h220le.pdf 

DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Input Capacitance 2.3A 220m @ VGS = 10V Fast Switching Speed 100V 250m @ VGS = 4.5V 2.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen a

 9.19. Size:487K  diodes
 dmn10h170svt.pdf 

DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 160m @ VGS = 10V 2.6A Fast Switching Speed 100V 200m @ VGS = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (

 9.20. Size:410K  diodes
 dmn1006uca6.pdf 

DMN1006UCA6 6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features IS CSP with Footprint 2.70mm 1.81mm BVSSS RSS(ON) MAX TA = +25 C Height = 0.21mm for Low Profile ESD Protection of Gate 5.9m @ VGS = 4.5V 16.6A 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 9.0m @ VGS = 2.5V 12.1A Halogen and Antimony Free. Green De

 9.21. Size:351K  diodes
 dmn10h099sk3.pdf 

DMN10H099SK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(on) max Small form factor thermally efficient package enables higher TC = +25 C 80m @ VGS = 10V 17A density end products 100V 99m @ VGS = 6V 15A Lead-Free Finish; RoHS compliant (Note 1 & 2) Haloge

 9.22. Size:286K  diodes
 dmn1032ucb4.pdf 

DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features LD-MOS technology with the lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 18m to minimize on-state losses 12V 18m 3.2nC 0.3nC 4.8A Qg = 3.2nC for ultra-fast switching Vgs(th) = 0.8V typ. for a low turn-on potential Typ. @ VGS = 4.5V, TA = +25 C CSP with Footprint 1.0mm 1.0mm

 9.23. Size:89K  tysemi
 dmn100.pdf 

Product specification DMN100 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Extremely Low On-Resistance 170m @ VGS = 4.5V Case SC59 Case Material Molded Plastic, "Green" Molding Compound. High Drain Current 1.1A UL Flammability Classification Rating 94V-0 Ideal for Notebook Computer, Portable Phone, PCMCIA Moisture Sensitivity Level 1 pe

 9.24. Size:265K  inchange semiconductor
 dmn10h100sk3.pdf 

isc N-Channel MOSFET Transistor DMN10H100SK3 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 9.25. Size:266K  inchange semiconductor
 dmn10h099sk3.pdf 

isc N-Channel MOSFET Transistor DMN10H099SK3 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p