DMN3015LSD - описание и поиск аналогов

 ..1. Size:281K  diodes
 dmn3015lsd.pdf 

DMN3015LSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-Resistance TA = +25 C 15m @ VGS = 10V 8.4A Fast Switching Speed 30V 18m @ VGS = 4.5V 7.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 8.1. Size:394K  1
 dmn3016lps-13.pdf 

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A

 8.2. Size:426K  1
 dmn3010lfg-7.pdf 

DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A

 8.3. Size:426K  diodes
 dmn3010lfg.pdf 

DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A

 8.4. Size:146K  diodes
 dmn3010lss.pdf 

 8.5. Size:212K  diodes
 dmn3018sss.pdf 

DMN3018SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 21m @ VGS = 10V 7.3A ESD Protected Gate Green component and RoHS compliant (Notes 1 & 2) 30V 35m @ VGS = 4.5V 5.5A Qualified to AEC-Q101 standards for

 8.6. Size:347K  diodes
 dmn3016lps.pdf 

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A

 8.7. Size:276K  diodes
 dmn3010lk3.pdf 

DMN3010LK3 Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher 9.5m @ VGS = 10V 43A density end products 30V 11.5m @ VGS = 4.5V 39A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and

 8.8. Size:297K  diodes
 dmn3018ssd.pdf 

DMN3018SSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C 100% UIS (Avalanche) Rated 22m @ VGS = 10V 6.7A ESD Protected Gate 30V 30m @ VGS = 4.5V 5.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Quali

 8.9. Size:256K  diodes
 dmn3018sfg.pdf 

DMN3018SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products 21m @ VGS = 10V 8.5A 30V Occupies just 33% of the board area occupied by SO-8 enabling 35m @ VG

 8.10. Size:266K  diodes
 dmn3016lfde.pdf 

 8.11. Size:462K  diodes
 dmn3016lk3.pdf 

DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(on) Low On-Resistance TC = +25 C Fast Switching Speed 12m @ VGS = 10V 37.8A Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 30V 16m @ VGS = 4.5V 32.8A Halogen and Antimony Free. Green D

 8.12. Size:286K  diodes
 dmn3016lss.pdf 

DMN3016LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C 12m @ VGS = 10V 10.3 A Fast Switching Speed 30V 9.3 A 16m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

 8.13. Size:366K  diodes
 dmn3016ldn.pdf 

DMN3016LDN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 20m @ VGS = 10V 7.3A Fast Switching Speed N-Channel 30V 6.7A 24m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev

 8.14. Size:266K  inchange semiconductor
 dmn3010lk3.pdf 

isc N-Channel MOSFET Transistor DMN3010LK3 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.15. Size:266K  inchange semiconductor
 dmn3016lk3.pdf 

isc N-Channel MOSFET Transistor DMN3016LK3 FEATURES Drain Current I = 37.8A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu