DMN30H4D0L - описание и поиск аналогов

 ..1. Size:373K  diodes
 dmn30h4d0l.pdf 

 0.1. Size:386K  diodes
 dmn30h4d0lfde.pdf 

DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.6mm profile ideal for low profile applications V(BR)DSS RDS(ON) TA = +25 C PCB footprint of 4mm2 4 @ VGS = 10V 0.55A Low Gate Threshold Voltage 300V 4 @ VGS = 4.5V 0.55A Low Input Capacitance 6 @ VGS = 2.7V 0.44A Fast Switching Speed Totally Lead-Free & Fu

 8.1. Size:334K  diodes
 dmn30h14dly.pdf 

DMN30H14DLY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) TA = +25 C Low Input Capacitance Fast Switching Speed 14 @ VGS = 10V 0.21A 300V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20 @ VGS = 4.5V 0.17A Halogen and Antimony Free. Green Device (Note 3) Qualified t

 9.1. Size:544K  1
 dmn3009lfvw-7.pdf 

DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25 C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b

 9.2. Size:394K  1
 dmn3016lps-13.pdf 

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A

 9.3. Size:426K  1
 dmn3010lfg-7.pdf 

DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A

 9.4. Size:193K  diodes
 dmn3051l.pdf 

DMN3051L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 RDS(ON)

 9.5. Size:426K  diodes
 dmn3010lfg.pdf 

DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A

 9.6. Size:153K  diodes
 dmn3033lsd.pdf 

DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 22m @ VGS = 10V Moisture Sensitivity Level 1

 9.7. Size:591K  diodes
 dmn3009sk3.pdf 

DMN3009SK3 Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 5.5m @ VGS = 10V 80A 30V Halogen and Antimony Free. Green Device (Note 3) 9.0m @ VGS = 4.5V 60A Qualified to AEC-Q101 Standards for H

 9.8. Size:210K  diodes
 dmn3005lk3.pdf 

DMN3005LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case TO252-3L Case Material Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals Connections See

 9.9. Size:332K  diodes
 dmn3042l.pdf 

DMN3042L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance V(BR)DSS RDS(ON) max ID max Low Gate Threshold Voltage Low Input Capacitance 5.8A 26.5m @ VGS = 10V Fast Switching Speed 30V 32m @ VGS = 4.5V 5.0A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen an

 9.10. Size:290K  diodes
 dmn3026lvt.pdf 

DMN3026LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 23m @ VGS = 10V 6.6A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qual

 9.11. Size:321K  diodes
 dmn3032le.pdf 

DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Input Capacitance 29m @ VGS = 10V 5.6A Fast Switching Speed 30V 35m @ VGS = 4.5V 4.8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 9.12. Size:146K  diodes
 dmn3010lss.pdf 

 9.13. Size:545K  diodes
 dmn3035lwn.pdf 

DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) MAX TA = +25 C Low Input Capacitance 35m @ VGS = 10V 5.5A Fast Switching Speed 30V 45m @ VGS = 4.5V 4.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio

 9.14. Size:544K  diodes
 dmn3009lfvw.pdf 

DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25 C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b

 9.15. Size:212K  diodes
 dmn3018sss.pdf 

DMN3018SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 21m @ VGS = 10V 7.3A ESD Protected Gate Green component and RoHS compliant (Notes 1 & 2) 30V 35m @ VGS = 4.5V 5.5A Qualified to AEC-Q101 standards for

 9.16. Size:346K  diodes
 dmn3053l.pdf 

DMN3053L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25 C Low Gate Threshold Voltage Low Input Capacitance 45m @ VGS = 10V 4.0 A 30V Fast Switching Speed 50m @ VGS = 4.5V 3.5A Low Input/Output Leakage ESD Protected Gate Description Totally Lead-Free & Fully RoHS Co

 9.17. Size:272K  diodes
 dmn3030lfg.pdf 

DMN3030LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) Package TA = +25 C Small form factor thermally efficient package enables higher 18m @ VGS = 10V POWERDI 8.6A density end products 30V 3333-8 27m @ VGS = 4.5V 5.5A Occupies just 33% of the boa

 9.18. Size:135K  diodes
 dmn3050s.pdf 

DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 35m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D Low Gate T

 9.19. Size:170K  diodes
 dmn3052lss.pdf 

DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SO-8 30m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 40m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020

 9.20. Size:505K  diodes
 dmn3008sfg.pdf 

DMN3008SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Ensures on-state losses are minimized ID max V(BR)DSS RDS(ON) max TC = +25 C Small, form factor thermally efficient package enables higher density end products 4.4m @ VGS = 10V 62A 30V Occupies only 33% of the board area occupied by SO-8 enabling

 9.21. Size:347K  diodes
 dmn3016lps.pdf 

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A

 9.22. Size:179K  diodes
 dmn3031lss.pdf 

DMN3031LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SO-8 18.5m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 31m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D

 9.23. Size:111K  diodes
 dmn3051ldm.pdf 

DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-26 38 m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 64 m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020 Low

 9.24. Size:157K  diodes
 dmn3024sfg.pdf 

DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25 C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.5A density end products 30V O

 9.25. Size:248K  diodes
 dmn3067lw.pdf 

DMN3067LW N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low On-Resistance ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 67m @ VGS = 4.5V 2.6A Fast Switching Speed 30V 70m @ VGS = 4.0V 2.5A Small Surface Mount Package 98m @ VGS = 2.5V 2.2A ESD Protected Gate Totally Lea

 9.26. Size:397K  diodes
 dmn3033lsnq.pdf 

DMN3033LSNQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Charge ID BVDSS RDS(on) max Low RDS(ON) TA = +25 C Low Input/Output Leakage 6A 30m @ VGS = 10V 30V 40m @ VGS = 4.5V 4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standa

 9.27. Size:293K  diodes
 dmn3025lss.pdf 

DMN3025LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Low Input Capacitance V(BR)DSS RDS(ON)max TA = +25 C Fast Switching Speed 20m @ VGS = 10V 7.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 31m @ VGS = 4.5V 5.8A Halogen and Antimony Free. Green Device (Note 3) Qu

 9.28. Size:546K  diodes
 dmn3023l.pdf 

DMN3023L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) TA = +25 C Low Gate Threshold Voltage Low Input Capacitance 6.2A 25m @ VGS = 10V Fast Switching Speed 30V 28m @ VGS = 4.5V 5.8A Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Complian

 9.29. Size:276K  diodes
 dmn3010lk3.pdf 

DMN3010LK3 Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher 9.5m @ VGS = 10V 43A density end products 30V 11.5m @ VGS = 4.5V 39A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and

 9.30. Size:297K  diodes
 dmn3018ssd.pdf 

DMN3018SSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C 100% UIS (Avalanche) Rated 22m @ VGS = 10V 6.7A ESD Protected Gate 30V 30m @ VGS = 4.5V 5.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Quali

 9.31. Size:256K  diodes
 dmn3018sfg.pdf 

DMN3018SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products 21m @ VGS = 10V 8.5A 30V Occupies just 33% of the board area occupied by SO-8 enabling 35m @ VG

 9.32. Size:266K  diodes
 dmn3016lfde.pdf 

 9.33. Size:462K  diodes
 dmn3016lk3.pdf 

DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(on) Low On-Resistance TC = +25 C Fast Switching Speed 12m @ VGS = 10V 37.8A Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 30V 16m @ VGS = 4.5V 32.8A Halogen and Antimony Free. Green D

 9.34. Size:669K  diodes
 dmn3024lk3.pdf 

A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Low gate drive 24m @ VGS= 10V 14.4A Green component and RoHS compliant (Note 1) 30

 9.35. Size:147K  diodes
 dmn3033ldm.pdf 

DMN3033LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low Gate Charge Case SOT-26 Low RDS(ON) Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 33 m @VGS = 10V Moisture Sensitivity Level 1 per J-STD-020D 40 m @VGS

 9.36. Size:159K  diodes
 dmn3052l.pdf 

DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 RDS(ON)

 9.37. Size:195K  diodes
 dmn3029lfg.pdf 

DMN3029LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) Small form factor thermally efficient package enables higher TA = 25 C density end products 18.6m @ VGS = 10V 8.0A Occupies just 33% of the board area occupied by SO-8 enabling 30V smaller end pr

 9.38. Size:687K  diodes
 dmn3024lsd.pdf 

A Product Line of Diodes Incorporated DMN3024LSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 7.2A 30V 36m @ VGS= 4.5V 5.8A M

 9.39. Size:130K  diodes
 dmn3033lsn.pdf 

DMN3033LSN N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low Gate Charge Case SC-59 Low RDS(ON) Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity Level 1 per J-STD-020 40 m @VGS =

 9.40. Size:275K  diodes
 dmn3020lk3.pdf 

A Product Line of Diodes Incorporated DMN3020LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green Component and RoHS compliant 20m @ VGS= 10V 16.7A 30V 34m @ VGS= 4.5V 12.6A Mechanical Da

 9.41. Size:284K  diodes
 dmn3025lfg.pdf 

DMN3025LFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low RDS(ON) ensures on state losses are minimized ID Max V(BR)DSS RDS(ON) Max Small form factor thermally efficient package enables higher TA = +25 C density end products Occupies just 33% of the board area occupied by SO-8 enabling 18m @ VGS = 10V 7.5A smaller end prod

 9.42. Size:286K  diodes
 dmn3016lss.pdf 

DMN3016LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C 12m @ VGS = 10V 10.3 A Fast Switching Speed 30V 9.3 A 16m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

 9.43. Size:281K  diodes
 dmn3015lsd.pdf 

DMN3015LSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-Resistance TA = +25 C 15m @ VGS = 10V 8.4A Fast Switching Speed 30V 18m @ VGS = 4.5V 7.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 9.44. Size:220K  diodes
 dmn3065lw.pdf 

DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features ID max Low On-Resistance V(BR)DSS RDS(ON) Package TA = +25 C Low Gate Threshold Voltage 52m @ VGS = 10V Low Input Capacitance 30V 65m @ VGS = 4.5V SOT323 4A Fast Switching Speed 85m @ VGS = 2.5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS com

 9.45. Size:305K  diodes
 dmn3024lss.pdf 

A Product Line of Diodes Incorporated DMN3024LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 8.5A 30V 36m @ VGS= 4.5V 6.9A Mechan

 9.46. Size:573K  diodes
 dmn3032lfdb.pdf 

DMN3032LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TA = +25 C Fast Switching Speed 6.2A 30m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 42m @ VGS = 4.5V 5.2A Halogen and Antimony Free

 9.47. Size:366K  diodes
 dmn3016ldn.pdf 

DMN3016LDN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 20m @ VGS = 10V 7.3A Fast Switching Speed N-Channel 30V 6.7A 24m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev

 9.48. Size:132K  diodes
 dmn3050s-7.pdf 

DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 35m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D Low Gate T

 9.49. Size:151K  diodes
 dmn3007lss.pdf 

DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 7m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 10m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals Connections See Di

 9.50. Size:177K  diodes
 dmn3030lss.pdf 

 9.51. Size:243K  diodes
 dmn3070ssn.pdf 

DMN3070SSN 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25 C ESD Protected Gate 40m @ VGS = 10V 5.1A 30V SC59 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 50m @ VGS = 4.5V 4.3A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standard

 9.52. Size:100K  tysemi
 dmn3051l.pdf 

Product specification DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 38m @ VGS = -10V 5.8A Fast Switching Speed 30V Low Input/Output Leakage 64m @ VGS = -4.5V 4.5A Lead-Free Finish; RoHS compliant (Note 1)

 9.53. Size:91K  tysemi
 dmn3052l.pdf 

Product specification DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-23 RDS(ON)

 9.54. Size:75K  tysemi
 dmn3033lsn.pdf 

Product specification DMN3033LSN N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Charge Case SC-59 Low RDS(ON) Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity Level 1 per J-STD-020 40 m @VGS = 4.5V Terminals Finish Matte

 9.55. Size:836K  cn vbsemi
 dmn3033lsn.pdf 

DMN3033LSN www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

 9.56. Size:265K  inchange semiconductor
 dmn3009sk3.pdf 

isc N-Channel MOSFET Transistor DMN3009SK3 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 5.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.57. Size:266K  inchange semiconductor
 dmn3010lk3.pdf 

isc N-Channel MOSFET Transistor DMN3010LK3 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.58. Size:266K  inchange semiconductor
 dmn3016lk3.pdf 

isc N-Channel MOSFET Transistor DMN3016LK3 FEATURES Drain Current I = 37.8A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.59. Size:265K  inchange semiconductor
 dmn3024lk3.pdf 

isc N-Channel MOSFET Transistor DMN3024LK3 FEATURES Drain Current I = 14.4A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu