DMN313DLT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMN313DLT
Маркировка: NA2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.28 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.27 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 0.5 nC
trⓘ - Время нарастания: 2.24 ns
Cossⓘ - Выходная емкость: 7.6 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
Тип корпуса: SOT-523
DMN313DLT Datasheet (PDF)
dmn313dlt.pdf
DMN313DLTN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 2 @ VGS = 4V 270mA Low Input/Output Leakage 30V Lead Free By Design/RoHS Compliant (Note 1) 3.2 @ VGS = 2.5V 210mA ESD Protected up to 2kV "Green" Device (Note 2)
dmn3135lvt.pdf
DMN3135LVT30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(on) TA = 25C Fast Switching Speed Low Input/Output Leakage 60m @ VGS = 10V 3.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 100m @ VGS = 4.5V 2.8A Halogen and Antimony Free.
dmn3112sss.pdf
DMN3112SSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 57m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D
dmn3112s.pdf
DMN3112SN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 57m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-02
dmn3115udm.pdf
DMN3115UDMN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-26 60 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 80 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020 130 m @ VGS = 1.5V Terminal Connections:
dmn3110lcp3.pdf
DMN3110LCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Qg & Qgd BVDSS RDS(ON) Max TA = +25C Small Footprint Low Profile 0.30mm Height 69m @ VGS = 8V 3.2A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 80m @ VGS = 4.5V 3.0A Halogen and Antimony Free. Green Device (Note 3) Description Mecha
dmn3110s.pdf
DMN3110SN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 73m @ VGS = 10V 3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 30V 110m @ VGS = 4.5V 2.7A Quali
dmn3150l.pdf
DMN3150LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
dmn31d5ufz.pdf
DMN31D5UFZN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package Height ID max V(BR)DSS RDS(ON) max TA = +25C 0.62mm x 0.62mm Package Footprint Low On-Resistance1.5 @ VGS = 4.5V Very Low Gate Threshold Voltage, 1.0V max 2.0 @ VGS = 2.5V 30V 0.22A ESD Protected Gate3.0 @ VGS = 1.
dmn3190ldw.pdf
DMN3190LDWDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID (MAX) V(BR)DSS RDS(ON) (MAX) Package TA = +25C Low Input Capacitance Fast Switching Speed 190m @ VGS = 10V 1A 30V SOT363 ESD Protected Gate335m @ VGS = 4.5V 0.75A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and An
dmn3150lw.pdf
DMN3150LWN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-323 RDS(ON)
dmn3112s.pdf
Product specification DMN3112SN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT2357m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: Finis
dmn3110s.pdf
Product specificationDMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID maxV(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 73m @ VGS = 10V 3.3A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 30V 110m @ VGS = 4.5V 2.7A Qualified to AEC-Q101 sta
dmn3150l.pdf
Product specificationDMN3150LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918