DMN4026SSD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMN4026SSD
Маркировка: N4026SD
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 8.8 nC
trⓘ - Время нарастания: 7.1 ns
Cossⓘ - Выходная емкость: 84 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
Тип корпуса: SO-8
Аналог (замена) для DMN4026SSD
DMN4026SSD Datasheet (PDF)
dmn4026ssd.pdf
DMN4026SSD40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 24m @VGS = 10V 9.0A Fast Switching Speed 40V 32m @VGS = 4.5V 7.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description
dmn4026sk3.pdf
DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 24m @VGS = 10V 28A 40V Halogen and Antimony Free. Green Device (Note 3) 32m @VGS = 4.5
dmn4026sk3.pdf
isc N-Channel MOSFET Transistor DMN4026SK3FEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
dmn4027sss.pdf
A Product Line ofDiodes IncorporatedDMN4027SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 8.0A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 6.1A Mechanic
dmn4020lfde.pdf
DMN4020LFDE40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = +25C Low On-Resistance 20m@ VGS = 10V 8.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antim
dmn4027ssd.pdf
A Product Line ofDiodes IncorporatedDMN4027SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 7.1A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 5.4A Mec
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918