Справочник MOSFET. DMN53D0LW

 

DMN53D0LW MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMN53D0LW
   Маркировка: MM5
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.32 W
   Предельно допустимое напряжение сток-исток |Uds|: 50 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 0.36 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 1.2 nC
   Время нарастания (tr): 2.5 ns
   Выходная емкость (Cd): 5.3 pf
   Сопротивление сток-исток открытого транзистора (Rds): 2 Ohm
   Тип корпуса: SOT-323

 Аналог (замена) для DMN53D0LW

 

 

DMN53D0LW Datasheet (PDF)

 ..1. Size:237K  diodes
 dmn53d0lw.pdf

DMN53D0LW DMN53D0LW

DMN53D0LWN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.

 6.1. Size:248K  diodes
 dmn53d0lt.pdf

DMN53D0LW DMN53D0LW

DMN53D0LTN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface

 6.2. Size:328K  diodes
 dmn53d0l.pdf

DMN53D0LW DMN53D0LW

DMN53D0LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 500 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/Output Leakage ESD Protected to 2KV

 6.3. Size:256K  diodes
 dmn53d0lv.pdf

DMN53D0LW DMN53D0LW

DMN53D0LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Dual N-Channel MOSFETID V(BR)DSS RDS(ON) Low On-ResistanceTA = +25C Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Sm

 6.4. Size:430K  diodes
 dmn53d0lq.pdf

DMN53D0LW DMN53D0LW

DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25C Very Low Gate Threshold Voltage Low Input Capacitance 1.6 @ VGS = 10V 500 mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 200 mA Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Fre

 6.5. Size:258K  diodes
 dmn53d0ldw.pdf

DMN53D0LW DMN53D0LW

DMN53D0LDWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Dual N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 1.6 @ VGS = 10V 360mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 250mA Small Surface Mount Package ESD protected to 2KV Description Totally Lead-Free &

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History: TPM2102BC3

 

 
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