Справочник MOSFET. DMN65D8LFB

 

DMN65D8LFB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMN65D8LFB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.43 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.26 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.15 ns
   Cossⓘ - Выходная емкость: 4.7 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: X1-DFN1006-3

 Аналог (замена) для DMN65D8LFB

 

 

DMN65D8LFB Datasheet (PDF)

 ..1. Size:104K  diodes
 dmn65d8lfb.pdf

DMN65D8LFB DMN65D8LFB

DMN65D8LFBN-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits N-Channel MOSFETID V(BR)DSS RDS(ON) Low On-Resistance TA = 25C Low Gate Threshold Voltage 3.0 @ VGS = 10V 400mA Low Input Capacitance 60V Fast Switching Speed 4.0 @ VGS = 5V 330mA Small Surface Mount Package ESD Protected Gate, 1.2kV HBM L

 6.1. Size:148K  diodes
 dmn65d8lw.pdf

DMN65D8LFB DMN65D8LFB

DMN65D8LWN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(ON) Package Low Gate Threshold Voltage TA = +25C Low Input Capacitance 3 @ VGS = 10V 300mA Fast Switching Speed 60V SOT323 Small Surface Mount Package 4 @ VGS = 5V 260mA ESD Protected Gate, 1KV (HBM) Lead-Free Finish; RoHS Compliant

 6.2. Size:143K  diodes
 dmn65d8l.pdf

DMN65D8LFB DMN65D8LFB

DMN65D8LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(ON) Package Low Gate Threshold Voltage TA = +25C Low Input Capacitance 3 @ VGS = 10V 310mA Fast Switching Speed 60V SOT23 Small Surface Mount Package 4 @ VGS = 5V 270mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Not

 6.3. Size:455K  diodes
 dmn65d8lq.pdf

DMN65D8LFB DMN65D8LFB

DMN65D8LQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(ON) Package TA = +25C Low Gate Threshold Voltage Low Input Capacitance 310mA 3 @ VGS = 10V 60V SOT23 Fast Switching Speed 4 @ VGS = 5V 270mA Small Surface Mount Package ESD Protected Gate Description Totally Lead-Free & Full

 6.4. Size:188K  diodes
 dmn65d8ldw.pdf

DMN65D8LFB DMN65D8LFB

GreenDMN65D8LDWDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFETID V(BR)DSS RDS(ON) Package Low On-ResistanceTA = +25C Low Gate Threshold Voltage 8 @ VGS = 5V 170mA Low Input Capacitance 60V SOT363 6 @ VGS = 10V 200mA Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM)

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History: DMNH6042SSDQ

 

 
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