DMS3014SSS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DMS3014SSS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10.4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 24.4 ns
Cossⓘ - Выходная емкость: 164 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: SO-8
- подбор MOSFET транзистора по параметрам
DMS3014SSS Datasheet (PDF)
dms3014sss.pdf

DMS3014SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
dms3014sfg.pdf

DMS3014SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits DIOFET utilizes a unique patented process to monolithically ID max V(BR)DSS RDS(ON) max integrate a MOSFET and a Schottky in a single die to deliver: TA = 25C Low RDS(ON) minimize conduction losses Low VSD reducing the losses due to body diode conduction 13m
fdms3016dc.pdf

July 2013FDMS3016DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS
dms3016sss.pdf

DMS3016SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: APT6017LLLG | 7788 | HM50N15 | XP152A12COMR | IPP65R150CFD | 2SJ360 | TPM1012ER3
History: APT6017LLLG | 7788 | HM50N15 | XP152A12COMR | IPP65R150CFD | 2SJ360 | TPM1012ER3



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