DSKTJ08 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DSKTJ08
Маркировка: CT_CU
Тип транзистора: JFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.002 A
Tjⓘ - Максимальная температура канала: 80 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1500 Ohm
Тип корпуса: TSSSMINI3-F2-B
DSKTJ08 Datasheet (PDF)
dsktj08.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ08Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain Packaging 2: Source
dsktj05.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ05Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain Packaging 2: Source
dsktj04.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ04Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package Low noise voltage NV and high speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain
dsktj07.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ07Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package Low noise voltage NV Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain Packaging 2: Source Emb
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