FKI10300
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FKI10300
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 38
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 23
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 36.5
nC
trⓘ -
Время нарастания: 4.4
ns
Cossⓘ - Выходная емкость: 195
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0288
Ohm
Тип корпуса:
TO-220F
FKI10300
Datasheet (PDF)
..1. Size:1101K sanken-ele
fki10300.pdf 
100 V, 23 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET FKI10300 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 23 A RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gate Charge
0.1. Size:245K inchange semiconductor
fki10300-220.pdf 
isc N-Channel MOSFET Transistor FKI10300FEATURESLow drain-source on-resistance:RDS(on) 28.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC convertersSynchronous rectificationPower suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
9.1. Size:260K sanken-ele
fki10198.pdf 
100 V, 31 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET FKI10198 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 31 A RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gate Charge
9.2. Size:260K sanken-ele
fki10126.pdf 
100 V, 41 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET FKI10126 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 41 A RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------ 45.2nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate Charge
9.3. Size:260K sanken-ele
fki10531.pdf 
100 V, 18 A, 34.7 m Low RDS(ON) N ch Trench Power MOSFET FKI10531 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 18 A RDS(ON) -------- 54.5 m max. (VGS = 10 V, ID = 11.9 A) Qg ------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A) Low Total Gate Charge
9.4. Size:252K inchange semiconductor
fki10198.pdf 
isc N-Channel MOSFET Transistor FKI10198FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =18.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.5. Size:251K inchange semiconductor
fki10126.pdf 
isc N-Channel MOSFET Transistor FKI10126FEATURESDrain Current I =41A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =12.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.6. Size:252K inchange semiconductor
fki10531.pdf 
isc N-Channel MOSFET Transistor FKI10531FEATURESDrain Current I =18A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =54.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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