FQU10N20 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQU10N20
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 95 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: TO-251
Аналог (замена) для FQU10N20
FQU10N20 Datasheet (PDF)
fqu10n20.pdf

isc N-Channel MOSFET Transistor FQU10N20FEATURESDrain Source Voltage-: V = 200V(Min)DSSLow On-Resistance: R = 0.36(Max)DS(on)100% Avalanche TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower factor correctionSwitched mode power suppliesUninterruptible Power SupplyABSOLUTE MAXIMUM RATINGS(T
fqd10n20tf fqd10n20tm fqu10n20tu.pdf

April 2000TMQFETQFETQFETQFETFQD10N20 / FQU10N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.6A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technol
fqd10n20ctf fqd10n20ctm fqu10n20ctu.pdf

July 2013FQD10N20C / FQU10N20C N-Channel QFET MOSFET200 V, 7.8 A, 360 mDescription FeaturesThis N-Channel enhancement mode power MOSFET is 7.8 A, 200 V, RDS(on) = 360 m (Max.)@ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 3.9 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 20 nC)MOSFET technology has been espe
fqd10n20c fqu10n20c.pdf

January 2009QFETFQD10N20C / FQU10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.8A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been espe
Другие MOSFET... DSKTJ07 , DSKTJ08 , 2SK3591 , 36N06 , 65N06 , FCP125N65S3 , FKI10300 , FMH08N80E , STP80NF70 , IPA180N10N3 , IPA60R120P7 , IPB048N15N5LF , IPD031N06L3 , IPD033N06N , IPD034N06N3 , IPD036N04L , IPD038N06N3 .
History: MCAC10H03 | BSP316P | CS20N60A8H | IRFI1010NPBF | PSMN041-80YL | 2SK3730-01MR | ZXMD63P03X
History: MCAC10H03 | BSP316P | CS20N60A8H | IRFI1010NPBF | PSMN041-80YL | 2SK3730-01MR | ZXMD63P03X



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