IPD046N08N5 - описание и поиск аналогов

IPD046N08N5 MOSFET D-PAK OptiMOSTM5 Power-Transistor, 80 V Features tab N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC1) for target application 3 Ideal for high-frequency switching and synchronous re

isc N-Channel MOSFET Transistor IPD046N08N5,IIPD046N08N5 FEATURES Static drain-source on-resistance RDS(on) 4.6m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80 V DSS V

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IPD04N03LB G IPS04N03LB G IPU04N03LB G IPF04N03LB G OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Ideal for high-frequency dc/dc converters R 4.1 m DS(on),max Qualified according to JEDEC1) for target applications I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C operat

IPD042P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features VDS -30 V single P-Channel (Logic Level) VGS = 10V RDS(on),max 4.2 mW Enhancement mode VGS = 4.5V 6.8 Qualified according JEDEC1) for target applications ID -70 A 175 C operating temperature Pb-free; RoHS compliant applications load switch, HS-switch PG-TO252-3 D Haloge

isc N-Channel MOSFET Transistor IPD048N06L3 IIPD048N06L3 FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage