IPD048N06L3 - описание и поиск аналогов

pe % # ! % (>.;?6?@ %>E Features D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 4 m D n) m x R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD D R I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) R /6CJ =@H @? C6D DE2?46 , D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?D Type #*

isc N-Channel MOSFET Transistor IPD048N06L3 IIPD048N06L3 FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

IPD046N08N5 MOSFET D-PAK OptiMOSTM5 Power-Transistor, 80 V Features tab N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC1) for target application 3 Ideal for high-frequency switching and synchronous re

# # &! # # A0

pe $ " $& " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- 4 m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Type #* ( & ! #*- (

pe $ " $& " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features D R !3DE DH;E5 ;@9 (* .! / 8AC .(+. 4 m D n) m x R * BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD D 1) R , F3>;8;76 355AC6;@9 EA % 8AC E3C97E 3BB>;53E;A@D R ) 5 3@@7> >A9;5 >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E !* ( D n) R 07CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 C3E76 R +4 8C77 B>3E;@9 - A#. 5A?B>;3@E R #3>A97@ 8C77 355A

pe $ " $& " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- 4 m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Type #* ( & ! #*- (

IPD04N03LB G IPS04N03LB G IPU04N03LB G IPF04N03LB G OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Ideal for high-frequency dc/dc converters R 4.1 m DS(on),max Qualified according to JEDEC1) for target applications I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C operat

IPD042P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features VDS -30 V single P-Channel (Logic Level) VGS = 10V RDS(on),max 4.2 mW Enhancement mode VGS = 4.5V 6.8 Qualified according JEDEC1) for target applications ID -70 A 175 C operating temperature Pb-free; RoHS compliant applications load switch, HS-switch PG-TO252-3 D Haloge

isc N-Channel MOSFET Transistor IPD046N08N5,IIPD046N08N5 FEATURES Static drain-source on-resistance RDS(on) 4.6m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80 V DSS V