pe % # ! % (>.;?6?@%>EFeaturesD R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 4 m D n) m xR ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CDDR I46==6?E 82E6 492C86 I AC@5F4E ) ' D n)R /6CJ =@H @? C6D:DE2?46 ,D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?DType #*

isc N-Channel MOSFET Transistor IPD048N06L3IIPD048N06L3FEATURESStatic drain-source on-resistance:RDS(on)4.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

IPD046N08N5MOSFETD-PAKOptiMOSTM5 Power-Transistor, 80 VFeaturestab N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant1 Qualified according to JEDEC1) for target application3 Ideal for high-frequency switching and synchronous re

# # &! # #:A0

pe $ " $& " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 4 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DType #* ( & ! #*- (

pe $ " $& " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesD R !3DE DH;E5:;@9 (* .! / 8AC .(+. 4m D n) m xR * BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CDD1)R , F3>;8;76 355AC6;@9 EA % 8AC E3C97E 3BB>;53E;A@DR ) 5:3@@7> >A9;5 >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E !* ( D n)R 07CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 C3E76R +4 8C77 B>3E;@9 - A#. 5A?B>;3@ER #3>A97@ 8C77 355A

pe $ " $& " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 4 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DType #* ( & ! #*- (

IPD04N03LB G IPS04N03LB GIPU04N03LB G IPF04N03LB GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Ideal for high-frequency dc/dc convertersR 4.1mDS(on),max Qualified according to JEDEC1) for target applicationsI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C operat

IPD042P03L3 GOptiMOSTM P3 Power-TransistorProduct Summary FeaturesVDS -30 V single P-Channel (Logic Level)VGS = 10V RDS(on),max 4.2 mW Enhancement modeVGS = 4.5V 6.8 Qualified according JEDEC1) for target applicationsID -70 A 175 C operating temperature Pb-free; RoHS compliant applications: load switch, HS-switchPG-TO252-3 D Haloge

isc N-Channel MOSFET Transistor IPD046N08N5,IIPD046N08N5FEATURESStatic drain-source on-resistance:RDS(on)4.6mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80 VDSSV