IPD088N06N3 - описание и поиск аналогов

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isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3 FEATURES Static drain-source on-resistance RDS(on) 8.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD088N06N3G FEATURES With TO-252(DPAK) packaging With low gate drive requirements Very high commutation ruggedness 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC silverbox UPS and solar ABSOLUTE

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IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3 FEATURES Static drain-source on-resistance RDS(on) 8.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET