IPD16CN10N - описание и поиск аналогов

www.DataSheet4U.com IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 16 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 53 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified

isc N-Channel MOSFET Transistor IPD16CN10N,IIPD16CN10N FEATURES Static drain-source on-resistance RDS(on) 16m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

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