Справочник MOSFET. IPP052N06L3

 

IPP052N06L3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP052N06L3
   Маркировка: 052N06L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 115 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 37 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP052N06L3

 

 

IPP052N06L3 Datasheet (PDF)

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 ipp052n06l3.pdf

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IPP052N06L3www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0090 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002

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 ipp052n06l3.pdf

IPP052N06L3 IPP052N06L3

isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3FEATURESStatic drain-source on-resistance:RDS(on) 4.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switching for SMPSOptimized technology for DC/DC convertersABSOLUTE MAXIMUM RATINGS(

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 ipp052n08n5.pdf

IPP052N06L3 IPP052N06L3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP052N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP052N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

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 ipp052n08n5.pdf

IPP052N06L3 IPP052N06L3

isc N-Channel MOSFET Transistor IPP052N08N5IIPP052N08N5FEATURESStatic drain-source on-resistance:RDS(on) 5.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25

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IPP052N06L3 IPP052N06L3

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 ipp052ne7n3.pdf

IPP052N06L3 IPP052N06L3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP052NE7N3IIPP052NE7N3FEATURESStatic drain-source on-resistance:RDS(on) 5.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

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