Справочник MOSFET. IPP110N20N3

 

IPP110N20N3 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPP110N20N3
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 88 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 401 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для IPP110N20N3

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPP110N20N3 Datasheet (PDF)

 ..1. Size:245K  inchange semiconductor
ipp110n20n3.pdfpdf_icon

IPP110N20N3

isc N-Channel MOSFET Transistor IPP110N20N3IIPP110N20N3FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =

 0.1. Size:690K  infineon
ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdfpdf_icon

IPP110N20N3

IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

 4.1. Size:652K  infineon
ipb107n20na ipp110n20na.pdfpdf_icon

IPP110N20N3

IPB107N20NA IPP110N20NAOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE

 4.2. Size:245K  inchange semiconductor
ipp110n20na.pdfpdf_icon

IPP110N20N3

isc N-Channel MOSFET Transistor IPP110N20NAIIPP110N20NAFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET... IPP057N08N3 , IPP05CN10N , IPP070N08N3 , IPP075N15N3 , IPP076N12N3 , IPP076N15N5 , IPP093N06N3 , IPP100N08N3 , IRF4905 , IPP111N15N3 , IPP114N12N3 , IPP12CN10L , IPP147N12N3 , IPP16CN10N , IPP200N15N3 , IPP200N25N3 , IPP320N20N3 .

History: IRHN57250SE | NCE048N30Q | STFU10N80K5 | IRF7905 | MI4800 | 3N173 | WML07N65C2

 

 
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