IPP110N20N3 - описание и поиск аналогов

 

IPP110N20N3. Аналоги и основные параметры

Наименование производителя: IPP110N20N3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 88 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 26 ns

Cossⓘ - Выходная емкость: 401 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm

Тип корпуса: TO220

Аналог (замена) для IPP110N20N3

- подборⓘ MOSFET транзистора по параметрам

 

IPP110N20N3 даташит

 ..1. Size:245K  inchange semiconductor
ipp110n20n3.pdfpdf_icon

IPP110N20N3

isc N-Channel MOSFET Transistor IPP110N20N3 IIPP110N20N3 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =

 0.1. Size:690K  infineon
ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdfpdf_icon

IPP110N20N3

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

 4.1. Size:652K  infineon
ipb107n20na ipp110n20na.pdfpdf_icon

IPP110N20N3

IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE

 4.2. Size:245K  inchange semiconductor
ipp110n20na.pdfpdf_icon

IPP110N20N3

isc N-Channel MOSFET Transistor IPP110N20NA IIPP110N20NA FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET... IPP057N08N3 , IPP05CN10N , IPP070N08N3 , IPP075N15N3 , IPP076N12N3 , IPP076N15N5 , IPP093N06N3 , IPP100N08N3 , IRF4905 , IPP111N15N3 , IPP114N12N3 , IPP12CN10L , IPP147N12N3 , IPP16CN10N , IPP200N15N3 , IPP200N25N3 , IPP320N20N3 .

History: 2SJ154 | HU840U | JMSH0602AE | 2N4393C1B

 

 

 

 

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