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isc N-Channel MOSFET Transistor IPP147N12N3IIPP147N12N3FEATURESStatic drain-source on-resistance:RDS(on) 14.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS

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Type IPP147N03L GIPB147N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 14.7mDS(on),max Optimized technology for DC/DC convertersI 20 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(