Справочник MOSFET. IPP60R099P7

 

IPP60R099P7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP60R099P7
   Маркировка: 60R099P7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 117 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 45 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 33 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для IPP60R099P7

 

 

IPP60R099P7 Datasheet (PDF)

 ..1. Size:1742K  infineon
ipp60r099p7.pdf

IPP60R099P7
IPP60R099P7

IPP60R099P7MOSFETPG-TO 220600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 ..2. Size:244K  inchange semiconductor
ipp60r099p7.pdf

IPP60R099P7
IPP60R099P7

isc N-Channel MOSFET Transistor IPP60R099P7IIPP60R099P7FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the benefits of a fast switching SJ MOSFET withexcellent ease of useABSOLUTE M

 4.1. Size:2269K  infineon
ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdf

IPP60R099P7
IPP60R099P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R099P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R099P6, IPP60R099P6, IPA60R099P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 4.2. Size:245K  inchange semiconductor
ipp60r099p6.pdf

IPP60R099P7
IPP60R099P7

isc N-Channel MOSFET Transistor IPP60R099P6IIPP60R099P6FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of us

 5.1. Size:1879K  infineon
ipp60r099c7.pdf

IPP60R099P7
IPP60R099P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R099C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a

 5.2. Size:291K  infineon
ipp60r099cpa.pdf

IPP60R099P7
IPP60R099P7

IPP60R099CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Worldwide best R in TO220ds,on Ultra low gate chargePG-TO220-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for

 5.3. Size:1385K  infineon
ipp60r099c6.pdf

IPP60R099P7
IPP60R099P7

MOSFET+ =L9D - PA

 5.4. Size:571K  infineon
ipp60r099cp.pdf

IPP60R099P7
IPP60R099P7

IPP60R099CPCIMOSTM #:A0

 5.5. Size:2087K  infineon
ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf

IPP60R099P7
IPP60R099P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

 5.6. Size:244K  inchange semiconductor
ipp60r099c7.pdf

IPP60R099P7
IPP60R099P7

isc N-Channel MOSFET Transistor IPP60R099C7IIPP60R099C7FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the benefits of a fast switching SJ MOSFET withexcellent ease of useABSOLUTE M

 5.7. Size:245K  inchange semiconductor
ipp60r099c6.pdf

IPP60R099P7
IPP60R099P7

isc N-Channel MOSFET Transistor IPP60R099C6IIPP60R099C6FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONProvide all benefits of a fast switching super junction MOS while notSacrificing ease of use

 5.8. Size:245K  inchange semiconductor
ipp60r099cp.pdf

IPP60R099P7
IPP60R099P7

isc N-Channel MOSFET Transistor IPP60R099CPIIPP60R099CPFEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

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