IPP60R099P7 - описание и поиск аналогов

 

IPP60R099P7. Аналоги и основные параметры

Наименование производителя: IPP60R099P7

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 117 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 33 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm

Тип корпуса: TO-220

Аналог (замена) для IPP60R099P7

- подборⓘ MOSFET транзистора по параметрам

 

IPP60R099P7 даташит

 ..1. Size:1742K  infineon
ipp60r099p7.pdfpdf_icon

IPP60R099P7

IPP60R099P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

 ..2. Size:244K  inchange semiconductor
ipp60r099p7.pdfpdf_icon

IPP60R099P7

isc N-Channel MOSFET Transistor IPP60R099P7 IIPP60R099P7 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE M

 4.1. Size:2269K  infineon
ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdfpdf_icon

IPP60R099P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 4.2. Size:245K  inchange semiconductor
ipp60r099p6.pdfpdf_icon

IPP60R099P7

isc N-Channel MOSFET Transistor IPP60R099P6 IIPP60R099P6 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of us

Другие MOSFET... IPP16CN10N , IPP200N15N3 , IPP200N25N3 , IPP320N20N3 , IPP530N15N3 , IPP600N25N3 , IPP60R060C7 , IPP60R080P7 , IRF1010E , IPP60R120C7 , IPP60R170CFD7 , IPP60R180P7 , IPP60R280CFD7 , IPP60R280P7 , IPP60R600P7 , IPW60R120P7 , IRF135B203 .

History: ST3422A | SUD50N02-06P

 

 

 

 

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