Справочник MOSFET. IPP60R280CFD7

 

IPP60R280CFD7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP60R280CFD7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 14 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для IPP60R280CFD7

 

 

IPP60R280CFD7 Datasheet (PDF)

 ..1. Size:1718K  infineon
 ipp60r280cfd7.pdf

IPP60R280CFD7 IPP60R280CFD7

IPP60R280CFD7MOSFETPG-TO 220600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching application

 ..2. Size:246K  inchange semiconductor
 ipp60r280cfd7.pdf

IPP60R280CFD7 IPP60R280CFD7

isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONThis new product series blends all advantages of a fast switchingtechnology together with

 4.1. Size:1451K  infineon
 ipp60r280c6.pdf

IPP60R280CFD7 IPP60R280CFD7

MOSFET+ =L9D - PA

 4.2. Size:1587K  infineon
 ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf

IPP60R280CFD7 IPP60R280CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 4.3. Size:245K  inchange semiconductor
 ipp60r280c6.pdf

IPP60R280CFD7 IPP60R280CFD7

isc N-Channel MOSFET Transistor IPP60R280C6IIPP60R280C6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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