Справочник MOSFET. 2N7222

 

2N7222 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2N7222
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 73 ns
   Cossⓘ - Выходная емкость: 310 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
   Тип корпуса: TO-254AA

 Аналог (замена) для 2N7222

 

 

2N7222 Datasheet (PDF)

 ..1. Size:226K  international rectifier
2n7222 2n7222 irfm440.pdf

2N7222
2N7222

 ..2. Size:64K  omnirel
2n7218 2n7219 2n7221 2n7222.pdf

2N7222
2N7222

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/596100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL

 0.1. Size:179K  international rectifier
2n7222u.pdf

2N7222
2N7222

PD - 91552CIRFN440JANTX2N7222UJANTXV2N7222UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN440 0.85 8.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

 9.1. Size:271K  international rectifier
2n7227u.pdf

2N7222
2N7222

PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi

 9.2. Size:220K  international rectifier
2n7221u.pdf

2N7222
2N7222

PD-91550DIRFN340JANTX2N7221UJANTXV2N7221UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN340 0.55 10AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si

 9.3. Size:165K  international rectifier
2n7224u.pdf

2N7222
2N7222

PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

 9.4. Size:180K  international rectifier
2n7228u.pdf

2N7222
2N7222

PD - 90418CIRFN450JANTX2N7228UJANTXV2N7228UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

 9.5. Size:64K  omnirel
2n7224 2n7225 2n7227 2n7228.pdf

2N7222
2N7222

2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/592100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL

 9.6. Size:62K  apt
2n7227.pdf

2N7222
2N7222

DTO-254G2N7227 400 Volt 0.315SJX2N7227*JV2N7227*TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter 2N7227 UNITVDSS Drain-Source Voltage400VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C14IDCo

 9.7. Size:61K  apt
2n7228.pdf

2N7222
2N7222

DTO-254G2N7228 500 Volt 0.415SJX2N7228*JV2N7228*TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter 2N7228 UNITVDSS Drain-Source Voltage500VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C12IDCo

 9.8. Size:23K  semelab
2n7224 irfm150.pdf

2N7222
2N7222

2N7224SEMEIRFM150LABMECHANICAL DATADimensions in mm (inches)NCHANNEL13.59 (0.535) 6.32 (0.249)POWER MOSFET13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)VDSS 100VID(cont) 34ARDS(on) 0.0701 2 3FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE0.89 (0.035)1.14 (0

 9.9. Size:165K  microsemi
2n7225u.pdf

2N7222
2N7222

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C u

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