2N7222. Аналоги и основные параметры
Наименование производителя: 2N7222
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 73 ns
Cossⓘ - Выходная емкость: 310 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
Тип корпуса: TO-254AA
Аналог (замена) для 2N7222
- подборⓘ MOSFET транзистора по параметрам
2N7222 даташит
..2. Size:64K omnirel
2n7218 2n7219 2n7221 2n7222.pdf 

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES Repetitive Avalanche Rating Isolated and Hermetically Sealed L
0.1. Size:179K international rectifier
2n7222u.pdf 

PD - 91552C IRFN440 JANTX2N7222U JANTXV2N7222U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 8.0A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-
9.1. Size:271K international rectifier
2n7227u.pdf 

PD-91551D IRFN350 JANTX2N7227U JANTXV2N7227U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 14A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on- state resi
9.2. Size:220K international rectifier
2n7221u.pdf 

PD-91550D IRFN340 JANTX2N7221U JANTXV2N7221U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN340 0.55 10A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- si
9.3. Size:165K international rectifier
2n7224u.pdf 

PD - 91547C IRFN150 JANTX2N7224U JANTXV2N7224U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 100V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 34A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-
9.4. Size:180K international rectifier
2n7228u.pdf 

PD - 90418C IRFN450 JANTX2N7228U JANTXV2N7228U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 12A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-
9.5. Size:64K omnirel
2n7224 2n7225 2n7227 2n7228.pdf 

2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES Repetitive Avalanche Rating Isolated and Hermetically Sealed L
9.6. Size:62K apt
2n7227.pdf 

D TO-254 G 2N7227 400 Volt 0.315 S JX2N7227* JV2N7227* TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter 2N7227 UNIT VDSS Drain-Source Voltage 400 Volts VGS Gate-Source Voltage 20 Continuous Drain Current @ TC = 25 C 14 ID Co
9.7. Size:61K apt
2n7228.pdf 

D TO-254 G 2N7228 500 Volt 0.415 S JX2N7228* JV2N7228* TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter 2N7228 UNIT VDSS Drain-Source Voltage 500 Volts VGS Gate-Source Voltage 20 Continuous Drain Current @ TC = 25 C 12 ID Co
9.8. Size:23K semelab
2n7224 irfm150.pdf 

2N7224 SEME IRFM150 LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 13.59 (0.535) 6.32 (0.249) POWER MOSFET 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) VDSS 100V ID(cont) 34A RDS(on) 0.070 1 2 3 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0
9.9. Size:165K microsemi
2n7225u.pdf 

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C u
Другие MOSFET... 2N7002X
, 2N7081-220M-ISO
, 2N7089
, 2N7090
, 2N7092
, 2N7218U
, 2N7219U
, 2N7221U
, 8N60
, 2N7222U
, 2N7224U
, 2N7225U
, 2N7227U
, 2N7228U
, 2N7236U
, 2N7261
, 2N7261U
.
History: 2N7081-220M-ISO
| STD20NF06T4