Справочник MOSFET. SFS9610

 

SFS9610 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFS9610
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 13 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 1.4 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 9 nC
   Время нарастания (tr): 20 ns
   Выходная емкость (Cd): 45 pf
   Сопротивление сток-исток открытого транзистора (Rds): 3 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для SFS9610

 

 

SFS9610 Datasheet (PDF)

 ..1. Size:491K  samsung
 sfs9610.pdf

SFS9610 SFS9610

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 2.25 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 8.1. Size:499K  samsung
 sfs9614.pdf

SFS9610 SFS9610

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.27 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 3.5 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 9.1. Size:256K  fairchild semi
 sfs9634.pdf

SFS9610 SFS9610

SFS9634Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.4 A Improved Gate Charge Extended Safe Operating AreaTO-220F Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.876 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

 9.2. Size:502K  samsung
 sfs9630.pdf

SFS9610 SFS9610

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.581 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 9.3. Size:502K  samsung
 sfs9624.pdf

SFS9610 SFS9610

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 1.65 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 9.4. Size:501K  samsung
 sfs9620.pdf

SFS9610 SFS9610

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 1.111 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 9.5. Size:505K  samsung
 sfs9640.pdf

SFS9610 SFS9610

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 9.6. Size:499K  samsung
 sfs9634.pdf

SFS9610 SFS9610

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.876 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 9.7. Size:503K  samsung
 sfs9644.pdf

SFS9610 SFS9610

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.549 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

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