PD - 91719BIRFE430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802UHEXFETTRANSISTORS JANTXV2N6802USURFACE MOUNT (LCC-18) [REF:MIL-PRF-19500/557]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE430 500V 1.50 2.5ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfacemount technology. Desinged

PD -90433CIRFF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802HEXFETTRANSISTORS JANTXV2N6802THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF430 500V 1.5 2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N68002N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE,QUALIFIED TO MIL-PRF-19500/557100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/557DESCRIPTIO

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr

PD - 90432CIRFF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800HEXFETTRANSISTORS JANTXV2N6800THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF330 400V 1.0 3.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

PD - 90548CIRF9230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806HEXFETTRANSISTORS JANTXV2N6806THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9230 -200V 0.80 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique p

2N6800SEMELABMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET BVDSS 400V ID 3.0A RDS(on) 1.0 FEATURES ! AVALANCHE ENERGY RATED

2N6800LCC4 MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 9.14 (0.360)ENHANCEMENT MODE 1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 16HIGH VOLTAGE 1.39 (0.055)1.02 (0.040)POWER MOSFETS 11 1710 18 7.62 (0.300) 7.12 (0.280)9 10.76 (0.030)8 2 BV 400V0.51 (0.020) DSS0.33 (0.013) ID 3.0ARad.0.08 (0.003)7 6 5 4 3R 1.0

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6800 2N6800UJANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag