RoHS 10N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(10A, 600Volts)DESCRIPTION The Nell 10N60 is a three-terminal silicon Ddevice with current conduction capabilityof 10A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts. They are designed for use in applications such G

RC1N0FM06AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1LDE21 2

PD - 91819CSMPS MOSFETIRFBL10N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power SwitchingBenefits Low Gate Charge Qg results in simpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Cu

SSF10N60AAdvanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.9 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.1 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b

SKP10N60A, SKB10N60ASKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generationCcombined with low conduction losses Short circuit withstand time 10 s Designed for:- Motor controlsGE- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- hig

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

SKP10N60A, SKB10N60ASKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generationCcombined with low conduction losses Short circuit withstand time 10 s Designed for:- Motor controlsGE- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- hig

SKB10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sGE Designed for frequency inverters for washing machines,fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers:- ver

SKP10N60A SKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - hig

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b

SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b

SGP10N60A SGW10N60AFast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter PG-TO-247-3 NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable b

Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E

Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E

RCM10N60AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2

N N-CHANNEL MOSFET FHP10N60A/ FHF10N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 23pF) Low Crss (typical 23pF ) VDSS 600V Fast switching Rdson-typ 0.68 @Vgs=10V 100% 100% avalanche tested Qg-typ 45nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATION High efficiency switch mode power su

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A

Silicon N-Channel Power MOSFET R CS10N60 A8HD VDSS 600 V General Description ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various