50N15 - описание и поиск аналогов

INCHANGE Semiconductor isc N-Channel Mosfet Transistor 50N15 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 150V (Min) DSS Static Drain-Source On-Resistance R

Spec. No. C033V8 Issued Date 2017.10.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8 BVDSS 150V ID @ TC=25 C, VGS=10V 12.4A ID @ TA=25 C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi

Spec. No. C033H8 Issued Date 2017.11.15 CYStech Electronics Corp. Revised Date Page No. 1/11 N-Channel Enhancement Mode Power MOSFET MTE050N15BRH8 BVDSS 150V ID@VGS=10V, TC=25 C 16A ID@VGS=10V, TA=25 C 4.3A RDS(ON)@VGS=10V, ID=3.4A 49.1m (typ) Features RDS(ON)@VGS=6V, ID=3.3A 58.5 m (typ) Single Drive Requirement Low On-resistance Fast Switchi

IXTK 150N15P PolarHTTM VDSS = 150 V IXTQ 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V G D (TAB) VGS Continuous 20 V D S VGSM Transient 30 V ID25 TC = 25

IXFH 150N15P PolarHTTM HiPerFET VDSS = 150 V IXFK 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Fast Intrinsic Diode trr 200 ns Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VGS Contin

HiPerFETTM IXFK 150N15 VDSS = 150 V IXFX 150N15 ID25 = 150 A Power MOSFETs RDS(on) = 12.5 mW Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 150 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 150

HiPerFETTM IXFN 150N15 VDSS = 150 V ID25 = 150 A Power MOSFET RDS(on) = 12.5 mW Single MOSFET Die trr 250 ns Preliminary data sheet miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 150 V S VDGR TJ = 25 C to 150 C, RGS = 1MW 150 V G VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 150 A S IL(RMS) Terminal (curre

Spec. No. C931J3 Issued Date 2014.02.21 CYStech Electronics Corp. Revised Date Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTE50N15J3 ID 28A RDS(ON)@VGS=10V, ID=20A 39 m (typ) RDS(ON)@VGS=7V, ID=10A 39 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS com

Spec. No. C931FP Issued Date 2013.12.06 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 150V MTE50N15FP ID 24A RDS(ON)@VGS=10V, ID=20A 39 m (typ) RDS(ON)@VGS=7V, ID=10A 39 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulatin

Spec. No. C033V8 Issued Date 2017.10.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8 BVDSS 150V ID @ TC=25 C, VGS=10V 12.4A ID @ TA=25 C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi

Spec. No. C931Q8 Issued Date 2014.03.24 CYStech Electronics Corp. Revised Date 2014.06.24 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 150V MTE50N15Q8 ID @VGS=10V 7.7A RDS(ON)@VGS=10V, ID=5A 39 m (typ) RDS(ON)@VGS=8V, ID=5A 40 m (typ) Features Single Drive Requirement Low On-resistance Fast Switching Characteristic

Spec. No. C033H8 Issued Date 2017.11.15 CYStech Electronics Corp. Revised Date Page No. 1/11 N-Channel Enhancement Mode Power MOSFET MTE050N15BRH8 BVDSS 150V ID@VGS=10V, TC=25 C 16A ID@VGS=10V, TA=25 C 4.3A RDS(ON)@VGS=10V, ID=3.4A 49.1m (typ) Features RDS(ON)@VGS=6V, ID=3.3A 58.5 m (typ) Single Drive Requirement Low On-resistance Fast Switchi

Spec. No. C979J3 Issued Date 2014.08.14 CYStech Electronics Corp. Revised Date 2014.08.18 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB050N15J3 ID @VGS=10V 20A RDS(ON)@VGS=10V, ID=15A 47.5m (typ) RDS(ON)@VGS=4.5V, ID=10A 47.5m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free p

DH50N15/DHF50N15/ DHI50N15/DHE50N15 50A 150V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets. used 2 D V = 150V DSS advanced trench process technology design, provided excellent Rdson and low gate charge. Which accords with the R = 18m DS(on) (Type) G RoHS standard. 1 I = 50A 3 S D 2 Features Low on resistance Low

FIR50N15PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR50N15PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

HSP150N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSP150N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 5 m and gate charge for most of the synchronous buck converter applications. ID 150 A The HSP150N15 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

HGS650N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 58.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 5 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit SOIC-8 G

HGD650N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 58 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 18 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC in Telecoms

HGD650N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 58 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 18 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching an

HGD750N15ML HGI750N15ML P-1 , 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, logic level 63 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 72 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 18 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and

HGN650N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 58 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 18 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching an

HGS650N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 58.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 5 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS

HGS750N15ML P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, logic level 63 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 70 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 4.6 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed

HGN650N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 58 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 18 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DFN5x6 DC/DC in T

HMS50N15LD N-Channel Super Trench Power MOSFET Description The HMS50N15LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti

HM50N15 N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

HM50N15 N-Channel Enhancement Mode Power MOSFET Description The HM50N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)