Справочник MOSFET. BUK436-60B

 

BUK436-60B Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK436-60B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
   Тип корпуса: TO-3PN
     - подбор MOSFET транзистора по параметрам

 

BUK436-60B Datasheet (PDF)

 5.1. Size:235K  inchange semiconductor
 buk436-60ab.pdf pdf_icon

BUK436-60B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applic

 7.1. Size:236K  inchange semiconductor
 buk436-800ab.pdf pdf_icon

BUK436-60B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 7.2. Size:235K  inchange semiconductor
 buk436-100ab.pdf pdf_icon

BUK436-60B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

 7.3. Size:235K  inchange semiconductor
 buk436-200ab.pdf pdf_icon

BUK436-60B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

ПОКАЗАТЬ ЕЩЁ

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History: IRF241 | NCE70T180D

 

 
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